Resistance change memory device

A resistance change memory device comprising:

• a semiconductor substrate;
• semiconductor layers formed in the semiconductor substrate so that these are arrayed in a matrix form while being partitioned by an element isolation dielectric film;
• diodes each formed at its corresponding semiconductor layer with a metal electrode as a terminal electrode, the metal electrode being formed at part of a surface of each the semiconductor layer;
• first wiring lines provided to commonly connect the diodes as arrayed in one direction of the matrix;
• an interlayer dielectric film covering the first wiring lines;
• metal plugs buried in space portions of the first wiring lines of the interlayer dielectric film and being in ohmic contact with each the semiconductor layer;
• variable resistance elements with a recoding layer formed above the interlayer dielectric film to have a bottom surface in contact with the metal plugs;
• and second wiring lines provided to cross the first wiring lines while being in contact with an upper surface of the recording layer, wherein
• the recoding layer is composed of a composite compound containing at least two types of cation elements, at least one type of the cation element being a transition element having “d”-orbit, in which electrons are incompletely filled, the shortest distance between adjacent cation elements being 0.32 nm or less.

A resistance change memory device comprising:

• an insulative substrate;
• first wiring lines formed above the insulative substrate;
• memory cells being formed over each the first wiring line so that one end is connected to each the first wiring line, each the memory cell having a stacked structure of a variable resistance element and a diode, the variable resistance element storing as information a resistance value;
• and second wiring lines formed over the memory cells to commonly connect together the other end portions of the memory cells arrayed in a direction crossing the first wiring lines, wherein
• the variable resistance element comprises a recording layer composed of a composite compound containing at least two types of cation elements, at least one type of the cation element being a transition element having “d”-orbit, in which electrons are incompletely filled, the shortest distance between adjacent cation elements being 0.32 nm or less.

A resistance change memory device comprising an insulative substrate and memory cell arrays stacked over the insulative substrate, wherein each the memory cell array comprises:

• first wiring lines extending in parallel with each other;
• memory cells formed above first wiring lines in such a manner that one ends are connected to the first wiring lines, the memory cell comprising a stacked structure of a variable resistance element and a diode, the variable resistance element storing as information a resistance value;
• and
• second wiring lines formed above the memory cells to commonly connect the other ends of the memory cells arrayed in a direction crossing the first wiring lines, and wherein
• the variable resistance element has a recording layer composed of a composite compound containing at least two types of cation elements, at least one type of the cation element being a transition element having “d”-orbit, in which electrons are incompletely filled, the shortest distance between adjacent cation elements being 0.32 nm or less.