Method and system for providing a magnetic memory structure utilizing spin transfer

A magnetic memory comprising:

• a plurality of magnetic memory cells, each of the plurality of magnetic memory cells including a magnetic element and a selection device connected with the magnetic element, the magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction;
• a plurality of local word lines connected with the selection device of a first portion of the plurality of magnetic memory cells, each of the local word lines having a first resistivity;
• a plurality of global word lines, each of the plurality of global word lines corresponding to a portion of the plurality of local word lines and having a second resistivity lower than the first resistivity;
• a plurality of bit lines connected with the magnetic element of each of the plurality of magnetic memory cells;
• and
• a plurality of source lines connected with the selection device of each of the plurality of magnetic storage cells, each of the plurality of source lines corresponding to a second portion of the plurality of magnetic memory cells and carrying the first write current and the second write current, the second portion of the plurality of magnetic memory cells including more than a single magnetic memory cell and coupled to different bit lines of the plurality of bit lines.

A magnetic memory comprising:

• a plurality of magnetic memory cells, each of the plurality of magnetic memory cells including a magnetic element and a selection device connected with the magnetic element, the magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction;
• a plurality of local word lines connected with the selection device of a first portion of the plurality of magnetic memory cells, each of the local word lines having a first resistivity;
• a plurality of global word lines, each of the plurality of global word lines corresponding to a portion of the plurality of local word lines and having a second resistivity lower than the first resistivity;
• a plurality of bit lines connected with the magnetic element of each of the plurality of magnetic memory cells;
• and
• a plurality of source lines connected with the selection device of each of the plurality of magnetic storage cells, each of the plurality of source lines corresponding to a second portion of the plurality of magnetic memory cells and carrying the first write current and the second write current, the second portion of the plurality of magnetic memory cells including more than a single magnetic memory cell;
• and
• at least one write control driver coupled with the plurality of source lines.

A magnetic memory comprising:

• a plurality of magnetic memory cells, each of the plurality of magnetic memory cells including a magnetic element and a selection device connected with the magnetic element, the magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction;
• a plurality of local word lines connected with the selection device of a first portion of the plurality of magnetic memory cells, each of the local word lines having a first resistivity;
• a plurality of global word lines, each of the plurality of global word lines corresponding to a portion of the plurality of local word lines and having a second resistivity lower than the first resistivity;
• a plurality of bit lines connected with the magnetic element of each of the plurality of magnetic memory cells;
• and
• a plurality of source lines connected with the selection device of each of the plurality of magnetic storage cells, each of the plurality of source lines corresponding to a second portion of the plurality of magnetic memory cells and carrying the first write current and the second write current, the second portion of the plurality of magnetic memory cells including more than a single magnetic memory cell;
• and
• at least one read sense amplifier coupled with the plurality of bit lines.

A magnetic memory comprising:

• a plurality of memory blocks, each of the plurality of memory blocks including a plurality of magnetic memory cells, and a plurality of bit lines, each of the plurality of magnetic memory cells including a magnetic element and a selection device connected with the magnetic element, the magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction,
• a plurality of local word lines, the plurality of local word lines connected with the selection device of a first portion of the plurality of magnetic memory cells in each of the plurality of memory blocks, each of the local word lines having a first resistivity;
• and
• a plurality of global word lines, each of the plurality of global word lines corresponding to a local word line of the plurality of local word lines, corresponding to the plurality of memory blocks, and having a second resistivity lower than the first resistivity;
• the plurality of bit lines connected with the magnetic element of each of the plurality of magnetic memory cells.

A magnetic memory comprising:

• a plurality of magnetic memory cells, each of the plurality of magnetic memory cells including a magnetic element and a selection device connected with the magnetic element, the magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction;
• a plurality of local word lines connected with the selection device of a first portion of the plurality of magnetic memory cells;
• a plurality of global word lines, each of the plurality of global word lines corresponding to a portion of the plurality of local word lines;
• a plurality of bit lines connected with the magnetic element of each of the plurality of magnetic memory cells;
• a plurality of source lines connected with the selection device of each of the plurality of magnetic storage cells, each of the plurality of source lines corresponding to a second portion of the plurality of magnetic memory cells and carrying the first write current and the second write current, the second portion of the plurality of magnetic memory cells including more than a single magnetic memory cell;
• and
• a plurality of pre-charge circuits connected with the plurality of bit lines and for charging at least one selected bit line of the plurality of bit lines to a pre-charge read voltage of at least ground and not more than a power supply voltage.

A magnetic memory comprising:

• a plurality of magnetic memory cells, each of the plurality of magnetic memory cells including a magnetic element and a selection device connected with the magnetic element, the magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction;
• a plurality of local word lines connected with the selection device of a first portion of the plurality of magnetic memory cells;
• a plurality of global word lines, each of the plurality of global word lines corresponding to a portion of the plurality of local word lines;
• a plurality of bit lines connected with the magnetic element of each of the plurality of magnetic memory cells;
• and
• a plurality of source lines connected with the selection device of each of the plurality of magnetic storage cells, each of the plurality of source lines corresponding to a second portion of the plurality of magnetic memory cells and carrying the first write current and the second write current, the second portion of the plurality of magnetic memory cells including more than a single magnetic memory cell;
• and
• at least one write control driver coupled with the plurality of source lines.