Semiconductor device having a field effect source/drain region
AssigneeSamsung Electronics Co., Ltd.
InventorsKi-Tae Park, Jung-Dal Choi, Uk-Jin Roh
Life of this patent
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Abstract
A semiconductor device includes an active region defined in a semiconductor substrate, and gate electrodes crossing over the active region. Source/drain regions are defined in the active region on two sides of the gate electrode. At least one of the source/drain regions is a field effect source/drain region generated by a fringe field of the gate. The other source/drain region is a PN-junction source/drain region having different impurity fields and different conductivity than the substrate. At least one of the source/drain regions is a field effect source/drain region. Accordingly, a short channel effect is reduced or eliminated in the device.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- an active region defined in the semiconductor substrate;
- a gate electrode crossing over the active region,
- two source/drain regions defined within the active region on two sides of the gate electrode,
- wherein at least one of the two source/drain regions is a field effect source/drain region generated by a fringe field from the gate electrode.
A semiconductor device comprising:
- a semiconductor substrate;
- an active region defined in the semiconductor substrate;
- a ground selection transistor and a string selection transistor disposed in the active region;
- pluralities of cell transistors disposed between the ground selection transistor and the string selection transistor, each of the cell transistors comprising two source/drain regions,
- wherein at least one of the source/drain regions of each of the cell transistors is a field effect source/drain region generated by a fringe field from a gate electrode.
Dependencies are inferred from the claim text.