Multiple metal-insulator-metal capacitors and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorSeok-jun Won
Life of this patent
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Abstract
In a device including multiple metal-insulator-metal (MIM) capacitors and a method of fabricating the same, the multiple MIM capacitors comprise a lower interconnect in a substrate; a first dielectric layer on the lower interconnect; a first intermediate electrode pattern on the first dielectric layer overlapping with the lower interconnect; a second intermediate electrode pattern on the first dielectric layer and spaced apart from the first intermediate electrode pattern in a same plane of the device as the first intermediate electrode pattern; a second dielectric pattern on the second intermediate electrode pattern; and an upper electrode pattern on the second dielectric pattern.
Claims10
A method of fabricating a semiconductor device including multiple metal-insulator-metal (MIM) capacitors, the method comprising:
- forming a lower interconnect in a substrate;
- forming a first dielectric layer on the lower interconnect;
- forming a first intermediate electrode pattern on the first dielectric layer overlapping with the lower interconnect, such that an entire bottom surface of the first intermediate electrode pattern abuts the first dielectric layer;
- forming a second intermediate electrode pattern on the first dielectric layer and spaced apart from the first intermediate electrode pattern in a same plane of the device as the first intermediate electrode pattern;
- forming a second dielectric pattern on the second intermediate electrode pattern;
- and
- forming an upper electrode pattern on the second dielectric pattern.
Dependencies are inferred from the claim text.