Sense amplifier control signal generating circuit of semiconductor memory apparatus
AssigneeHynix Semiconductor Inc.
InventorsDae-Suk Kim, Jong Chern Lee
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Abstract
A sense amplifier control signal generating circuit of a semiconductor memory apparatus is provided. The sense amplifier control signal generating circuit includes a timing control unit that models a transmission path of data from a memory cell to a sense amplifier through a bit line and generates a timing control signal at a sensing timing when the sense amplifier starts a sensing operation. A sense amplifier control signal generating unit receives the timing control signal and generates a sense amplifier control signal.
Claims11
A sense amplifier control signal generating circuit of a semiconductor memory apparatus, the sense amplifier control signal generating circuit comprising:
- a timing control unit configured to receive an active signals, detect whether a voltage difference between a bit line and a bit line bar is a value to enable a sense amplifier and to generate a timing control signal at a sensing timing when the voltage difference reaches the value;
- and
- a sense amplifier control signal generating unit configured to receive the timing control signal to generate a sense amplifier control signal.
A sense amplifier control signal generating circuit of a semiconductor memory apparatus, the sense amplifier control signal generating circuit comprising:
- a timing control unit configured to model a time of data transmitted from a memory cell to a sense amplifier through a bit line, detect whether a voltage difference between a bit line and a bit line bar is a value to enable a sense amplifier and generate a timing control signal at a sensing timing when the voltage difference reaches the value;
- and
- a sense amplifier control signal generating unit configured to receive the timing control signal to generate a sense amplifier control signal.
Dependencies are inferred from the claim text.