Method for inspecting transmission line characteristic of a semiconductor device using signal reflection measurement

A method for inspecting a semiconductor device, wherein said semiconductor device includes

• a primary connection port, which includes a signal pad and a ground pad,
• a transmission line comprising
• a primary transmission line portion including a branch node and connected to said primary connection port, and
• a plurality of branch transmission line portions extending symmetrically from said branch node with respect to said primary transmission line portion and a straight line extension of said primary transmission line portion,
• connection ports, which are symmetrically arranged with respect to said primary transmission line portion and the straight line extension of said primary transmission line portion, each connection port being connected to a respective one of said branch transmission line portions, and including at least one signal pad, and
• active elements, wherein each active element is connected to a respective one of said branch transmission line portions and for establishing and preventing electrical conduction through said respective one of said branch transmission line portions,
• the method comprising:
• establishing a first circuit state in which electrical conduction through at least a first of said plurality of branch transmission line portions is established, electrical conduction through at least a second of said branch transmission line portions is prevented, and measuring electrical signal reflection characteristics of said transmission line at said primary connection port to obtain a first measured value;
• establishing a second circuit state in which electrical conduction through at least a third of said branch transmission line portions is prevented, electrical conduction through said at least the second of said branch transmission line portions is established, and measuring said electrical signal reflection characteristics of said transmission line at said primary connection port to obtain a second measured value, wherein the second circuit state is a mirror image of the first circuit state with respect to said primary transmission line portion and the straight line extension of said primary transmission line portion;
• and
• comparing the first and second measured values to determine characteristics of said transmission line, wherein
• obtaining the first measured value includes establishing electrical conduction through said branch transmission line portions disposed at a first side of said primary transmission line portion and the straight line extension of said primary transmission line portion, preventing electrical conduction through said branch transmission line portions disposed at a second side of said primary transmission line portion and the straight line extension of said primary transmission line portion, and measuring the electrical signal reflection characteristics of said transmission line at said primary connection port to obtain a third measured value;
• obtaining the second measured value includes preventing electrical conduction through said branch transmission line portions disposed at the first side of said primary transmission line portion and the straight line extension of said primary transmission line portion, establishing electrical conduction through said branch transmission line portions disposed at the second side of said primary transmission line portion and the straight line extension of said primary transmission line portion, and measuring the electrical signal reflection characteristics of said transmission line at said primary connection port to obtain a fourth measured value;
• and
• comparing the first and second measured values to determine the characteristics of said transmission line includes comparing the third and fourth measured values to determine the characteristics of said transmission line.

A method for inspecting a semiconductor device,

• a primary connection port, which includes a signal pad and a ground pad,
• a transmission line comprising
• a primary transmission line portion including a branch node and connected to said primary connection port, and
• a plurality of branch transmission line portions extending symmetrically from said branch node with respect to said primary transmission line portion and a straight line extension of said primary transmission line portion,
• connection ports, which are symmetrically arranged with respect to said primary transmission line portion and the straight line extension of said primary transmission line portion, each connection port being connected to a respective one of said branch transmission line portions and including at least one signal pad, and
• active elements, wherein each active element is connected to a respective one of said branch transmission line portions and for establishing and preventing electrical conduction through said respective one of said branch transmission line portions,
• the method comprising:
• establishing a first circuit state in which electrical conduction through at least a first of said plurality of branch transmission line portions is established, electrical conduction through at least a second of said branch transmission line portions is prevented, and measuring electrical signal reflection characteristics of said transmission line at said primary connection port to obtain a first measured value;
• establishing a second circuit state in which electrical conduction through at least a third of said branch transmission line portions is prevented, electrical conduction through said at least the second of said branch transmission line portions is established, and measuring said electrical signal reflection characteristics of said transmission line at said primary connection port to obtain a second measured value, wherein the second circuit state is a mirror image of the first circuit state with respect to said primary transmission line portion and the straight line extension of said primary transmission line portion;
• and
• comparing the first and second measured values to determine characteristics of said transmission line, wherein said semiconductor device further includes a sub-primary connection port that includes a signal pad and a ground pad and that is disposed on an opposite side of said branch node relative to said primary connection port, and the method further comprises:
• establishing, by use of said active elements, a third circuit state in which electrical conduction through at least one of said branch transmission line portions is established and electrical conduction through at least one other branch transmission line portion is prevented, and measuring electrical signal transmission characteristics between said primary connection port and said sub-primary connection port to obtain a third measured value;
• establishing, by use of said active elements, a fourth circuit state in which electrical conduction through said at least one of said branch transmission line portions is prevented and electrical conduction through said at least one other branch transmission line portion is established, the fourth circuit state being a mirror image of the third circuit state, and measuring the electrical signal transmission characteristics between said primary connection port and said sub-primary connection port to obtain a fourth measured value;
• and
• comparing the third and fourth measured values to determine characteristics of said transmission line.