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US 7,622,810 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeSanyo Electric Co., Ltd.
InventorYukihiro Takao
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Abstract
Disconnection of wiring and deterioration of step coverage are prevented to offer a semiconductor device of high reliability. A pad electrode formed on a silicon die is connected with a re-distribution layer on a back surface of the silicon die. The connection is made through a pillar-shaped conductive path filled in a via hole penetrating the silicon die from the back surface of the silicon die to the pad electrode.
Claims10
A semiconductor device comprising:
- a semiconductor die comprising a top surface and a bottom surface;
- a pad electrode formed on the top surface of the semiconductor die and comprising a top face and a bottom face;
- a conductive pillar penetrating through the semiconductor die and being in contact with the bottom face of the pad electrode;
- and
- an insulating layer covering the entire top face of the pad electrode,
- wherein the conductive pillar comprises an insulating layer disposed on a sidewall of the conductive pillar, and
- there is no integrated circuit disposed over the top face of the pad electrode so as to be connected to the pad electrode.
4 more elements
Dependencies are inferred from the claim text.