Back to results
US 7,622,804 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeNEC Electronics Corporation
InventorKoichi Hasegawa
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor device including a semiconductor chip, a film (first film) which is provided so as to cover an active region with a peripheral portion of the semiconductor chip being uncovered, and is made of a dielectric material having a low dielectric constant, and a package molding resin (sealing resin) provided so as to cover the semiconductor chip and the film. As a result, deterioration in contact property with the sealing resin is suppressed and a high frequency characteristic can be enhanced.
Claims6
A semiconductor device, comprising:
- a semiconductor chip;
- a sealing resin provided so as to cover the semiconductor chip;
- a plate-like first film which is provided between the semiconductor chip and the sealing resin so as to cover an active region with a peripheral portion of the semiconductor chip being uncovered, and is made of a dielectric material having a dielectric constant lower than that of the sealing resin;
- and
- a second film which is provided between the first film and the sealing resin, and has higher compatibility with the sealing resin than compatibility of the first film,
- wherein the first film is in direct contact with both the semiconductor chip and the second film.
3 more elements
A semiconductor device, comprising:
- a semiconductor chip;
- a sealing resin provided so as to cover the semiconductor chip;
- a plate-like first film which is provided between the semiconductor chip and the sealing resin so as to cover an active region with a peripheral portion of the semiconductor chip being uncovered, and is made of a dielectric material having a dielectric constant lower than that of the sealing resin;
- and
- a second film which is provided between the first film and the sealing resin, and has higher compatibility with the sealing resin than compatibility of the first film,
- wherein the first film is formed only under a peripheral portion of the second film.
3 more elements
Dependencies are inferred from the claim text.