III-V group nitride system semiconductor substrate
AssigneeHitachi Cable, Ltd.
InventorMasatomo Shibata
Life of this patent
Estimating the term…
Abstract
A III-V group nitride system semiconductor substrate is of a III-V group nitride system single crystal. The III-V group nitride system semiconductor substrate has a flat surface, and a vector made by projecting on a surface of the substrate a normal vector of a low index surface closest to the substrate surface at an arbitrary point in a plane of the substrate is converged on a specific point or a specific region inside or outside the plane of the substrate.
Claims12
A III-V group nitride system semiconductor substrate, comprising a III-V group nitride system single crystal,
- wherein:
- a vector made by projecting on a surface of the substrate a normal vector of a low index surface closest to the substrate surface at an arbitrary point in a plane of the substrate is converged on a specific point or a specific region outside the substrate;
- and
- the III-V group nitride system semiconductor substrate surface comprises a flat surface.
A method of making a III-V group nitride system semiconductor substrate, comprising a III-V group nitride system single crystal, wherein:
- a vector made by projecting on a surface of the substrate a normal vector of a low index surface closest to the substrate surface at an arbitrary point in a plane of the substrate is converged on a specific point or a specific region outside the substrate;
- and the III-V group nitride system semiconductor substrate surface comprises a flat surface, comprising:
- hetero-epitaxially growing the III-V group nitride system single crystal on a hetero-substrate;
- and
- subsequently removing the hetero-substrate to obtain the III-V group nitride system semiconductor substrate.
A method of making a III-V group nitride system semiconductor substrate, comprising a III-V group nitride system single crystal, wherein:
- a vector made by projecting on a surface of the substrate a normal vector of a low index surface closest to the substrate surface at an arbitrary point in a plane of the substrate is converged on a specific point or a specific region outside the substrate;
- and the III-V group nitride system semiconductor substrate comprises a flat surface;
- comprising:
- polishing an upper surface of a substrate, the upper surface being of a III-V group nitride system single crystal and being concave upward-bowed, thereby obtaining the III-V group nitride system semiconductor substrate.
A III-V group nitride system semiconductor substrate, comprising:
- a first III-V group nitride system semiconductor substrate, comprising a III-V group nitride system single crystal, wherein:
- a vector made by projecting on a surface of the substrate a normal vector of a low index surface closest to the substrate surface at an arbitrary point in a plane of the substrate is converged on a specific point or a specific region outside the substrate;
- and the first III-V group nitride system semiconductor substrate surface comprises a flat surface;
- and
- a crystal layer that is formed on the first III-V group nitride system semiconductor substrate, and comprises a layer represented by AlxGa1-xN (0<x≦1).
A III-V group nitride system semiconductor device, comprising:
- a III-V group nitride system semiconductor substrate, comprising a III-V group nitride system single crystal, wherein:
- a vector made by projecting on a surface of the substrate a normal vector of a low index surface closest to the substrate surface at an arbitrary point in a plane of the substrate is converged on a specific point or a specific region outside the substrate;
- and the III-V group nitride system semiconductor substrate surface comprises a flat surface;
- and
- a plurality of crystal layers that are formed on the III-V group nitride system semiconductor substrate, and comprise a layer represented by AlxGa1-xN (0<x≦1).
A lot of LIT-V group nitride system semiconductor substrate, comprising a plurality of III-V group nitride system semiconductor substrates,
- wherein:
- each of the plurality of III-V group nitride system semiconductor substrates comprises a III-V group nitride system single crystal, wherein:
- a vector made by projecting on a surface of the substrate a normal vector of a low index surface closest to the substrate surface at an arbitrary point in a plane of the substrate is converged on a specific point or a specific region outside the substrate;
- and the each III-V group nitride system semiconductor substrate surface comprises a flat surface.
Dependencies are inferred from the claim text.