Polymer transistor arrangement, integrated circuit arrangement and method for producing a polymer transistor arrangement

Abstract

The invention relates to a polymer transistor arrangement, an integrated circuit arrangement and a method for producing a polymer transistor arrangement. The polymer transistor arrangement contains a polymer transistor formed in and/or on a substrate. The polymer transistor contains a first source/drain region, a second source/drain region, a channel region between the first and second source/drain regions, a gate region and a gate-insulating layer between channel region and gate region. A drive circuit of the polymer transistor arrangement is set up in such a way that it provides the source/drain regions and the gate region with electrical potentials such that the junction between at least one of the source/drain regions and the channel region can be operated as a diode.

Dependencies are inferred from the claim text.