Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorHisao Kawasaki
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Abstract
A semiconductor device includes: a substrate including a compound semiconductor, a semiconductor layer formed on a surface of the substrate, a plurality of gate electrodes formed on the semiconductor layer, a plurality of source electrodes formed on the semiconductor layer, a plurality of drain electrodes formed on the semiconductor layer, a via hole configured to extend from a substrate side of the semiconductor layer to a rear surface of the source electrode, a ground electrode which is formed on an inner wall of the via hole and on the rear surface of the substrate and connects the plurality of source electrodes, and a first air bridge interconnection which is formed on a surface side of the source electrode and connects the plurality of source electrodes.
Claims10
A semiconductor device comprising:
- a substrate including a compound semiconductor;
- a semiconductor layer formed on a surface of the substrate;
- a plurality of gate electrodes formed on the semiconductor layer;
- a plurality of source electrodes formed on the semiconductor layer;
- a plurality of drain electrodes formed on the semiconductor layer;
- a plurality of via holes, each of which is configured to extend from a rear surface of the substrate through the semiconductor layer to each of a rear side of the plurality of source electrodes;
- a ground electrode formed on an inner wall of the plurality of via holes and on a rear surface of the substrate, the ground electrode connecting to predetermined of the plurality of source electrodes;
- and
- a first air bridge interconnection formed on surface sides of the plurality of source electrodes, the first air bridge connecting to the predetermined of the plurality of source electrodes on surface sides of the predetermined of the plurality of source electrodes.
Dependencies are inferred from the claim text.