Semiconductor device including multi-gate metal-insulator-semiconductor (MIS) transistor
AssigneeKabushiki Kaisha Toshiba
InventorsToshifumi Irisawa, Toshinori Numata, Shinichi Takagi, Naoharu Sugiyama
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Abstract
In a semiconductor device including a multi-gate MIS transistor having a channel on a plurality of surfaces, a gate electrode is formed on a gate insulating film on side surfaces of an island-like semiconductor layer formed along a given direction on an insulating film, and source/drain electrodes are formed in contact with the semiconductor layer. The semiconductor layer has a plurality of side surfaces along the given direction. All angles formed by adjacent side surfaces are larger than 90°. A section perpendicular to the given direction is vertically and horizontally symmetrical.
Claims17
A semiconductor device comprising:
- a semiconductor layer formed in an island shape along a given direction on an insulating film and having a plurality of side surfaces along the given direction, all inside angles being larger than 90° and formed between each side surface, and a section of the semiconductor layer perpendicular to the given direction being a hexagon which is vertically and horizontally symmetrical;
- a gate insulating film formed on the side surfaces, the side surfaces to be used as a channel;
- a gate electrode formed on the gate insulating film;
- and
- source and drain electrodes formed in contact with the semiconductor layer with the gate electrode being arranged between the source and drain electrodes.
A semiconductor device comprising:
- a (100) substrate;
- a buried insulating film formed on the substrate;
- a semiconductor layer formed on the buried insulating film in an island shape along a <110> axis direction of the substrate and having a plurality of side surfaces along the <110>-axis direction, all inside angles being larger than 90° and formed between each side surface, and a section of the semiconductor layer perpendicular to the <110> axis direction being a hexagon which is vertically and horizontally symmetrical;
- a gate insulating film on the side surfaces, the side surfaces used as a channel, so as to surround a portion of the semiconductor layer;
- a gate electrode formed on the gate insulating film so as to surround a portion of the semiconductor layer;
- and
- source and drain electrodes formed in contact with the semiconductor layer to sandwich the channel of the semiconductor layer which is surrounded by the gate electrode.
Dependencies are inferred from the claim text.