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US 7,622,767 B2Granted
Semiconductor device with T-shaped gate electrode and hollow region adjacent the gate electrode
AssigneeMitsubishi Electric Corporation
InventorsYoichi Nogami, Toshikazu Hirayama
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Abstract
In a semiconductor device, a SiN first protective insulating film is formed on a semiconductor layer. A T-shaped gate electrode is formed on the semiconductor layer. A SiN second protective insulating film spreads in an umbrella shape from above the T-shaped gate electrode. A hollow region is formed between the two SiN films. The SiN films are coated with a SiN third protective insulating film with the hollow region remaining.
Claims3
A semiconductor device comprising:
- a semiconductor layer,
- a first protective insulating film on said semiconductor layer,
- a T-shaped gate electrode on said semiconductor layer and having a top portion,
- a second protective insulating film spread in an umbrella shape from above said T-shaped gate electrode with respect to said semiconductor layer and defining a hollow region between said first protective insulating film and said second protective insulating film, and
- a third protective insulating film coating and contacting both of said first and second protective insulating films, with said hollow region remaining.
2 more elements
A semiconductor device comprising:
- a semiconductor layer,
- a first protective insulating film on said semiconductor layer,
- a T-shaped gate electrode on said semiconductor layer and having a top portion,
- a second protective insulating film spread in an umbrella shape from above said T-shaped gate electrode with respect to said semiconductor layer and defining a hollow region between said first protective insulating film and said second protective insulating film,
- a third protective insulating film coating said first protective insulating film and said second protective insulating film with said hollow region remaining, and
- a reinforcing member on said second protective insulating film in sidewalls of the top portion of said T-shaped gate electrode.
3 more elements
Dependencies are inferred from the claim text.