Non-volatile memory device and a method of fabricating the same

A non-volatile memory device comprising:

• a semiconductor substrate including a body and at least one pair of fins vertically protruding from the body and spaced apart from each other;
• at least one control gate electrode on at least portions of outer side surfaces of the at least one pair of fins and extending onto top portions of the at least one pair of fins on an angle with the at least one pair of fins;
• and
• a buried insulating layer filling a space between the at least one pair of fins, wherein the at least one control gate electrode extends onto the buried insulating layer.

A method of fabricating a non-volatile memory device comprising:

• providing a semiconductor substrate including a body and at least one pair of fins vertically protruding from the body and spaced apart from each other;
• and
• forming at least one control gate electrode on at least portions of outer side surfaces of the at least one pair of fins and extending onto top portions of the at least one pair of fins on an angle with the at least one pair of fins,
• wherein the at least one control gate electrode is formed to extend onto top portions of the at least one pair of fins in a zigzag fashion.