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US 7,622,763 B2Granted
Field effect transistor and method for manufacturing same
AssigneeJapan Science and Technology Agency
InventorsJun Suda, Hiroyuki Matsunami
Life of this patent
Estimating the term…
Abstract
A field effect transistor comprises a SiC substrate 1, a source 3a and a drain 3b formed on the surface of the SiC substrate 1, an insulating structure comprising an AlN layer 5 formed in contact with the SiC surface and having a thickness of one molecule-layer or greater, and a SiO2 layer formed thereon, and a gate electrode 15 formed on the insulation structure. Leakage current can be controlled while the state of interface with SiC is maintained in a good condition.
Claims10
A non-volatile memory element comprising:
- an SiC surface structure;
- a floating-gate structure formed on said SiC surface structure, wherein said floating-gate structure includes an interface control layer, a first insulator barrier layer, a floating-gate layer formed of a metal or a semiconductor quantum well, a second insulator barrier layer, and a gate electrode layer, wherein said interface control layer is a Group-III nitride layer formed in contact with said SiC surface structure and having a film thickness in the range of one molecule-layer to a critical film thickness such that no misfit dislocation occurs with said SiC surface structure;
- and
- a source and a drain formed on said SiC surface structure adjacent to said floating-gate structure.
1 more element
A nonvolatile memory element comprising:
- an SiC surface structure;
- a floating-gate structure formed on said SiC surface structure including a first insulator barrier layer, a well layer, a second insulator barrier layer, and a gate electrode layer, wherein said first insulator barrier layer is formed in contact with said SiC surface structure and comprises a Group-III nitride epitaxial layer, said well layer is formed of a Group-III nitride epitaxial layer and functions as a floating gate, and said second insulator barrier layer is formed of a Group-III nitride epitaxial layer;
- and
- a source and a drain formed in said SiC surface structure adjacent to said floating-gate structure.
1 more element
Dependencies are inferred from the claim text.