Nonvolatile semiconductor memory and method for fabricating the same
AssigneeKabushiki Kaisha Toshiba
InventorsMinori Kajimoto, Mitsuhiro Noguchi, Akira Goda
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Abstract
A nonvolatile semiconductor memory includes a first semiconductor layer; second semiconductor regions formed on the first semiconductor layer having device isolating regions extended in a column direction; a first interlayer insulator film formed above the first semiconductor layer; a lower conductive plug connected to the second semiconductor regions; a first interconnect extended in a row direction; a second interlayer insulator formed on the lower conductive plug and the first interlayer insulator film; an upper conductive plug; and a second interconnect formed on the second interlayer insulator contacting with the top of the upper conductive plug extended in the column direction.
Claims4
A method for fabricating a nonvolatile semiconductor memory comprising:
- forming a barrier insulator film on a semiconductor substrate;
- subsequently forming a first interlayer insulator film on the barrier insulator film;
- delineating a data transfer line contact and a source line contact in the first interlayer insulator film;
- forming a trench in the first interlayer insulator film to bury a source line and a passing interconnect;
- depositing a first barrier metal in the trench;
- depositing a first metallic material to fill the trench;
- etching back the first metallic material to form the data transfer line contact, the source line contact, a source line, and a passing interconnect in the first interlayer insulator film;
- depositing a second interlayer insulator film on the first interlayer insulator film;
- delineating for a via contact in second interlayer insulator film;
- etching the second interlayer insulator film so as to extend the top of the data transfer line contact;
- depositing a second barrier metal on the top of the data transfer line contact;
- filling a second metallic material on the second barrier metal;
- etching back the second metallic material;
- and
- forming the via contact in second interlayer insulator film.
A method for fabricating a nonvolatile semiconductor memory, comprising:
- forming a barrier insulator film on a semiconductor substrate;
- subsequently forming a first interlayer insulator film on the barrier insulator film;
- delineating a data transfer line contact and a source line contact simultaneously in the first interlayer insulator film;
- forming a trench in the first interlayer insulator film to bury the data transfer line contact and the source line contact;
- depositing and filling one of phosphorus or arsenic doped polycrystalline silicon in the trench;
- etching back the doped polycrystalline silicon to bury the data transfer line contact and the source line contact in the first interlayer insulator film;
- forming another trench in the first interlayer insulator film to bury a source line, a passing interconnect, and a data transfer line interconnect;
- depositing a first barrier metal in the another trench;
- depositing a first metallic material to fill the another trench;
- etching back the first metallic material;
- forming the source line, the passing interconnect, and the data transfer line interconnect filled in the first interlayer insulator film;
- depositing a second interlayer insulator film on the first interlayer insulator film;
- delineating for a via contact in the second interlayer insulator film;
- etching the second interlayer insulator film so as to extend the top of the data transfer line interconnect;
- depositing a second barrier metal on the top of the data transfer line interconnect;
- filling the second metallic material on the second barrier metal;
- etching back the second metallic material;
- and
- forming the via contact in the second interlayer insulator film.
Dependencies are inferred from the claim text.