Back to results
US 7,622,758 B2Granted
CMOS image sensor with improved performance incorporating pixels with burst reset operation
OwnerJaroslav Hynecekinventor
Life of this patent
Estimating the term…
Abstract
A reset transistor includes a floating diffusion region for detecting a charge, a junction region for draining the charge, a gate for controlling a transfer of the charge from the floating diffusion region to the junction region upon receipt of a reset signal, and a potential well incorporated underneath the gate.
Claims16
A reset transistor, comprising:
- a floating diffusion region for detecting a charge;
- a junction region for draining the charge;
- a gate for controlling a transfer of the charge from the floating diffusion region to the junction region upon receipt of a reset signal;
- a potential well incorporated underneath the gate;
- and
- a pinned potential barrier formed between the potential well and the junction region, including a first diffusion region of a first type and a second diffusion region of a second type forming a junction field-effect transistor having a gate connected to a substrate, and one junction region shared with the junction region.
3 more elements
A pixel of an image sensor, the pixel comprising:
- a photodiode;
- and
- a resetting device comprising a reset transistor, the reset transistor comprising:
- a floating diffusion region for detecting a charge;
- a junction region for draining the charge;
- a gate for controlling a transfer of the charge from the floating diffusion region to the junction region upon receipt of a reset signal;
- a potential well incorporated underneath the gate;
- and
- a pinned potential barrier, formed between the potential well and the junction region, including a first diffusion region of a first type and a second diffusion region of a second type forming a junction field-effect transistor having a gate connected to a substrate, and one junction region shared with the junction region.
6 more elements
A shared photo site pixel, comprising:
- a photodiode coupled to a floating diffusion region in parallel;
- and
- a reset transistor for resetting the floating diffusion region, the reset transistor comprising:
- a junction region for draining a charge;
- a gate for controlling a transfer of the charge from the floating diffusion region to the junction region upon receipt of a reset signal;
- a potential well incorporated underneath the gate;
- and
- a pinned potential barrier, formed between the potential well and the junction region, including a first diffusion region of a first type and a second diffusion region of a second type forming a junction field-effect transistor having a gate connected to a substrate, and one junction region shared with the junction region.
5 more elements
Dependencies are inferred from the claim text.