Semiconductor device and radio communication device

A semiconductor device including a plurality of unit transistors, comprising:

• a plurality of first transistor formation regions each having a first number of said unit transistors;
• and
• a second transistor formation region having a second number of said unit transistors,
• wherein said second transistor formation region is located between said first transistor formation regions, and
• wherein said first number is larger than said second number, and
• wherein a passive element is placed in said second transistor formation region,
• wherein said passive element is a protective element for each of said unit transistors.

A semiconductor device including a plurality of unit transistors, comprising:

• a plurality of first transistor formation regions each having a first number of said unit transistors;
• and
• a second transistor formation region having a second number of said unit transistors,
• wherein said second transistor formation region is located between said first transistor formation regions, and
• wherein said first number is larger than said second number,
• wherein each of said unit transistors includes:
• a substrate;
• a collector layer formed over a main surface of said substrate;
• a base layer formed over said collector layer;
• an emitter layer comprised of an InGaP layer formed over said base layer;
• a collector electrode electrically connected to said collector layer;
• a base electrode electrically connected to said base layer;
• an emitter mesa layer formed over said emitter layer and electrically connected to said emitter layer;
• and
• an emitter electrode electrically connected to said emitter mesa layer, and
• wherein said emitter mesa layer has, over said emitter layer, a ballast resistor layer electrically connected to said emitter layer,
• wherein said first and second transistor formation regions each have a first end and a second end, opposite said first end, and wherein a hole providing connection between each of said emitter electrodes and an electrode formed on a back surface of said substrate is located adjacent respective first ends of said first and second transistor formation regions.

A semiconductor device including a plurality of unit transistors, comprising:

• a plurality of first transistor formation regions each having a first number of said unit transistors;
• and
• a second transistor formation region having a second number of said unit transistors,
• wherein said second transistor formation region is located between said first transistor formation regions, and
• wherein said first number is larger than said second number,
• wherein each of said unit transistors includes:
• a substrate;
• a collector layer formed over a main surface of said substrate;
• a base layer formed over said collector layer;
• an emitter layer comprised of an InGaP layer formed over said base layer;
• a collector electrode electrically connected to said collector layer;
• a base electrode electrically connected to said base layer;
• an emitter mesa layer formed over said emitter layer and electrically connected to said emitter layer;
• and
• an emitter electrode electrically connected to said emitter mesa layer, and
• wherein said emitter mesa layer has, over said emitter layer, a ballast resistor layer electrically connected to said emitter layer,
• wherein said first and second transistor formation regions each have a first end and a second end, opposite said first end, and wherein a capacitor element is disposed adjacent respective first ends of said first and second transistor formation regions.