Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device
AssigneeHitachi Cable, Ltd.
InventorRyoji Suzuki
Life of this patent
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Abstract
A n-type GaAs buffer layer 2, a n-type GaInP buffer layer 3, a n-type AlGaInP cladding layer 4, an undoped AlGaAs guide layer 5, an AlGaAs/GaAs multiquantum well (MQW) active layer 6, a first p-type AlGaInP cladding layer 7, a p-type GaInP etching stopper layer 8, a second p-type AlGaInP cladding layer 9, a C-doped AlGaAs layer (Zn-diffusion suppressing layer) 10, a p-type GaInP intermediate layer 11, and a p-type GaAs cap layer 12 are sequentially grown on a n-type GaAs substrate 1.
Claims20
An epitaxial wafer for a semiconductor light emitting device, comprising:
- an n-type cladding layer, an active layer, a p-type cladding layer, and a p-type cap layer sequentially grown on an n-type substrate,
- wherein a p-type dopant of the p-type cap layer is Zn and a C-doped p-type AlGaAs layer is interposed between the p-type cladding layer and the p-type cap layer,
- wherein the epitaxial wafer for the semiconductor light emitting device further comprises:
- a p-type intermediate layer interposed between the C-doped p-type AlGaAs layer and the p-type cap layer;
- a second p-type cladding layer;
- and
- a p-type etching stopper layer interposed between the p-type cladding layer and the second p-type cladding layer, and
- wherein the C-doped p-type AlGaAs layer is interposed between the second p-type cladding layer and the p-type intermediate layer.
An epitaxial wafer for a semiconductor light emitting device, comprising:
- an n-type cladding layer, an active layer, a p-type cladding layer, and a p-type cap layer sequentially grown on an n-type substrate,
- wherein a p-type dopant of the p-type cap layer is Zn and a C-doped p-type AlGaAs layer is interposed between the p-type cladding layer and the p-type cap layer,
- wherein the n-type substrate is comprised of GaAs, the n-type cladding layer comprises at least one layer comprised of AlGaInP, the p-type cladding layer comprises at least one layer comprised of AlGaInP, the p-type cap layer is comprised of GaAs, and a bandgap wavelength of the C-doped p-type AlGaAs layer is longer than a bandgap wavelength of the p-type cladding layer,
- wherein the epitaxial wafer for the semiconductor light emitting device further comprises:
- a p-type intermediate layer interposed between the C-doped p-type AlGaAs layer and the p-type cap layer;
- a second p-type cladding layer;
- and
- a p-type etching stopper layer interposed between the p-type cladding layer and the second p-type cladding layer, and
- wherein the C-doped p-type AlGaAs layer is interposed between the second p-type cladding layer and the p-type intermediate layer.
A semiconductor light emitting device, fabricated by using an epitaxial wafer for a semiconductor light emitting device comprising a n-type cladding layer, an active layer, a p-type cladding layer, and a p-type cap layer sequentially grown on an n-type substrate, wherein:
- a p-type dopant of the p-type cap layer is Zn and a C-doped p-type AlGaAs layer is interposed between the p-type cladding layer and the p-type cap layer;
- the n-type substrate is comprised of GaAs, the n-type cladding layer comprises at least one layer comprised of AlGaInP, the p-type cladding layer comprises at least one layer comprised of AlGaInP, the p-type cap layer is comprised of GaAs, and a bandgap wavelength of the C-doped p-type AlGaAs layer is longer than a bandgap wavelength of the p-type cladding layer,
- the epitaxial wafer for the semiconductor light emitting device further comprises:
- a p-type intermediate layer interposed between the C-doped p-type AlGaAs layer and the p-type cap layer;
- a second p-type cladding layer;
- and
- a p-type etching stopper layer interposed between the p-type cladding layer and the second p-type cladding layer, and
- the C-doped p-type AlGaAs layer is interposed between the second p-type cladding layer and the p-type intermediate layer.
A method for fabricating an epitaxial wafer for a semiconductor light emitting device, comprising the step of:
- epitaxially growing an n-type cladding layer, an active layer, a p-type cladding layer, a C-doped p-type AlGaAs layer, and a p-type cap layer sequentially on a n-type substrate,
- wherein:
- a p-type dopant of the p-type cap layer is Zn and a C-doped p-type AlGaAs layer is, as a result of the method, interposed between the p-type cladding layer and the p-type cap layer,
- wherein the n-type substrate is comprised of GaAs, the n-type cladding layer comprises at least one layer comprised of AlGaInP, the p-type cladding layer comprises at least one layer comprised of AlGaInP, the p-type cap layer is comprised of GaAs, and a bandgap wavelength of the C-doped p-type AlGaAs layer is longer than a bandgap wavelength of the p-type cladding layer,
- wherein, as a result of the method, the epitaxial wafer for the semiconductor light emitting device further comprises:
- a p-type intermediate layer interposed between the C-doped p-type AlGaAs layer and the p-type cap layer;
- a second p-type cladding layer;
- and
- a p-type etching stopper layer interposed between the p-type cladding layer and the second p-type cladding layer, and
- wherein, as a result of the method, the C-doped p-type AlGaAs layer is interposed between the second p-type cladding layer and the p-type intermediate layer.
Dependencies are inferred from the claim text.