III-nitride compound semiconductor light emitting device

A III-nitride compound semiconductor light-emitting device comprising:

• a plurality of III-nitride compound semiconductor layers that are epitaxially grown using a substrate, the plurality of III-nitride compound semiconductor layers including:
• an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen,
• an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and
• an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1-x-y)N layer, and
• wherein the n-type Al(x)ln(y)Ga(1-x-y)N layer has a top surface which is exposed by etching, the exposed top surface includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and a top surface of the region for scribing and breaking the device including a roughened surface such that light generated from the active layer escapes outwardly from the device through said roughened surface.