Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• an element formation layer including a first transistor, a second transistor, and a third transistor which are provided over a substrate;
• a memory element provided over the element formation layer;
• a conductive layer which functions as an antenna;
• and
• a sensor portion provided above the memory element,
• wherein the memory element has a layered structure including a first conductive layer, an organic compound layer, and a second conductive layer,
• wherein the first conductive layer is electrically connected to the first transistor,
• wherein the sensor portion is electrically connected to the second transistor, and
• wherein the conductive layer which functions as the antenna is electrically connected to the third transistor.

A semiconductor device comprising:

• an element formation layer including a first transistor, a second transistor, and a sensor portion which are provided over a substrate;
• and
• a memory element provided over the element formation layer,
• wherein the memory element has a layered structure including a first conductive layer, an organic compound layer, and a second conductive layer,
• wherein the first conductive layer is electrically connected to the first transistor, and
• wherein the sensor portion is electrically connected to the second transistor.

A semiconductor device comprising:

• an element formation layer including a first transistor, a second transistor, a third transistor, and a sensor portion which are provided over a substrate;
• a memory element provided over the element formation layer;
• and
• a conductive layer which functions as an antenna,
• wherein the memory element has a layered structure including a first conductive layer, an organic compound layer, and a second conductive layer,
• wherein the first conductive layer is electrically connected to the first transistor, and
• wherein the sensor portion is electrically connected to the second transistor, and
• wherein the conductive layer which functions as the antenna is electrically connected to the third transistor.

A semiconductor device comprising:

• an element formation layer including a first transistor and a second transistor which are provided over a substrate;
• and
• a memory element and a sensor portion which are provided over the element formation layer,
• wherein the memory element has a layered structure including a first conductive layer, a first organic compound layer, and a second conductive layer,
• wherein the sensor portion has a layered structure including a third conductive layer, a second organic compound layer and a fourth conductive layer,
• wherein the first conductive layer is electrically connected to the first transistor, and
• wherein the third conductive layer is electrically connected to the second transistor.

A semiconductor device comprising:

• an element formation layer including a first transistor, a second transistor, and a third transistor which are provided over a substrate;
• a memory element and a sensor portion which are provided over the element formation layer;
• and
• a conductive layer which functions as an antenna,
• wherein the memory element has a layered structure including a first conductive layer, a first organic compound layer, and a second conductive layer,
• wherein the sensor portion has a layered structure including a third conductive layer, a second organic compound layer, and a fourth conductive layer,
• wherein the first conductive layer is electrically connected to the first transistor,
• wherein the third conductive layer is electrically connected to the second transistor, and
• wherein the conductive layer which functions as the antenna is electrically connected to the third transistor.