Organic transistor using self-assembled monolayer
AssigneeHitachi, Ltd.
InventorsYuji Suwa, Tomihiro Hashizume, Masahiko Ando, Takeo Shiba
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AssigneeHitachi, Ltd.
InventorsYuji Suwa, Tomihiro Hashizume, Masahiko Ando, Takeo Shiba
Estimating the term…
Disclosed are a method for inexpensively reducing the contact resistance between an electrode and an organic semiconductor upon a p-type operation of the organic semiconductor; and a method for inexpensively operating, as an n-type semiconductor, an organic semiconductor that is likely to work as a p-type semiconductor. In addition, also disclosed are a p-cannel FET, an n-channel FET, and a C-TFT which can be fabricated inexpensively. Specifically, a p-type region and an n-type region is inexpensively prepared on one substrate by arranging an organic semiconductor that is likely to work as a p-type semiconductor in a p-channel FET region and an n-channel FET region of a C-TFT; and arranging a self-assembled monolayer between an electrode and the organic semiconductor in the n-channel FET region, which self-assembled monolayer is capable of allowing the organic semiconductor to work as an n-type semiconductor.
A complementary thin film transistor (C-TFT) comprising:
A complementary thin film transistor (C-TFT) comprising:
An n-channel field-effect transistor comprising:
Dependencies are inferred from the claim text.