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US 7,622,732 B1Granted
Heterostructure nanotube devices
AssigneeAtomate Corporation
InventorThomas W. Tombler, Jr.
Life of this patent
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Abstract
Heterostructure devices incorporate carbon nanotube technology to implement rectifying devices including diodes, rectifiers, silicon-controlled rectifiers, varistors, and thyristors. In a specific implementation, a rectifying device includes carbon nanotube and nanowire elements. The carbon nanotubes may be single-walled carbon nanotubes. The devices may be formed using parallel pores of a porous structure. The porous structure may be anodized aluminum oxide or another material. A device of the invention may be especially suited for high power applications.
Claims20
A method comprising:
- providing a structure comprising a first plurality of pores;
- processing to obtain in a first portion of each pore a single-walled carbon nanotube;
- and
- processing to obtain in a second portion of each pore a nanowire, wherein the nanowire is coupled to the single-walled carbon nanotube of the pore.
1 more element
A method comprising:
- fabricating in a first section of a porous structure, a single-walled carbon nanotube transistor;
- and
- fabricating in a second section of the porous structure, a single-walled carbon nanotube diode device, wherein a junction of the single-walled carbon nanotube diode device comprises a single-walled carbon nanotube and a nanowire.
Dependencies are inferred from the claim text.