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US 7,622,731 B2Granted
Cross-point memory array
AssigneeMarvell World Trade Ltd.
InventorsPantas Sutardja, Albert Wu
Life of this patent
Estimating the term…
Abstract
A circuit comprises a bulk silicon integrated circuit (IC). A first metallization layer is arranged adjacent to said bulk silicon IC. Phase change memory (PCM) is arranged adjacent to said first metallization layer and comprises a plurality of PCM cells each including a phase-change material, a heater that selectively heats said phase-change material, and a diode in series with said phase-change material.
Claims12
A circuit comprising:
- a bulk silicon integrated circuit (IC);
- a first metallization layer that is arranged adjacent to said bulk silicon IC;
- phase change memory (PCM) that is arranged adjacent to said first metallization layer and that comprises a plurality of PCM cells, each PCM cell including:
- a phase-change material,
- a heater that selectively heats said phase-change material, and
- a diode in series with said phase-change material, wherein said diode includes crystallized islands that are crystallized using a seeding metal layer and that are crystallized from an amorphous silicon layer that is deposited over said first metallization layer;
- and
- a conductive barrier material arranged between said first metallization layer and said diode.
5 more elements
A circuit comprising:
- a bulk silicon integrated circuit (IC);
- a first metallization layer that is arranged adjacent to said bulk silicon IC;
- and
- phase change memory (PCM) that is arranged adjacent to said first metallization layer and that comprises a plurality of PCM cells, each PCM cell including:
- a phase-change material,
- a heater that selectively heats said phase-change material, and
- a diode in series with said phase-change material,
- wherein said diode includes crystallized islands chat are crystallized using a seeding metal layer and chat are crystallized from an amorphous silicon layer that is deposited over said first metallization layer, and
- wherein said first metallization layer comprises copper.
6 more elements
A circuit comprising:
- a bulk silicon integrated circuit (IC);
- a first metallization layer that is arranged adjacent to said bulk silicon IC;
- and
- phase change memory (PCM) that is arranged adjacent to said first metallization layer and that corn rises a plurality of PCM cells, each PCM cell including:
- a phase-change material,
- a heater that selectively heats said phase-change material, and
- a diode in series with said phase-change material,
- wherein said diode includes crystallized islands chat are crystallized using a seeding metal layer and chat are crystallized from an amorphous silicon layer that is deposited over said first metallization layer, and
- wherein said seeding metal layer comprises nickel.
6 more elements
A circuit comprising:
- a bulk silicon integrated circuit (IC);
- a first metallization layer that is arranged adjacent to said bulk silicon IC;
- and
- phase change memory (PCM) that is arranged adjacent to said first metallization layer and that comprises a plurality of PCM cells, each PCM cell including:
- a phase-change material,
- a heater that selectively heats said phase-change material, and
- a diode in series with said phase-change material, wherein said diode includes crystallized islands that are crystallized using a seeding metal layer and that are crystallized from an amorphous silicon layer that is deposited over said first metallization layer,
- wherein said diode comprises an n-type layer,
- wherein said seeding metal layer crystallizes said n-type layer, and
- wherein said diode comprises a metal layer arranged adjacent to said n-type layer.
7 more elements
A system comprising:
- a circuit comprising:
- a bulk silicon integrated circuit (IC),
- a first metallization layer that is arranged adjacent to said bulk silicon IC, and
- phase change memory (PCM) that is arranged adjacent to said first metallization layer and that comprises a plurality of PCM cells, each PCM cell including;
- a phase-change material,
- a heater that selectively heats said phase-change material, and
- a diode in series with said phase-change material, wherein said diode includes crystallized islands that are crystallized using a seeding metal layer and that are crystallized from an amorphous silicon layer that is deposited over said first metallization layer;
- and
- a non-memory circuit that includes said first metallization layer, wherein said PCM is integrated with said non-memory circuit, and wherein said diode thermally communicates with said first metallization layer.
6 more elements
A system comprising:
- a circuit comprising:
- a bulk silicon integrated circuit (IC),
- a first metallization layer that is arranged adjacent to said bulk silicon IC, and
- phase change memory (PCM) that is arranged adjacent to said first metallization layer and that comprises a plurality of PCM cells, each PCM cell including
- a phase-change material,
- a heater that selectively heats said phase-change material, and
- a diode in series with said phase-change material, wherein said diode includes crystallized islands that are crystallized using a seeding metal layer and that are crystallized from an amorphous silicon layer that is deposited over said first metallization layer;
- and
- a memory circuit that includes said first metallization layer, wherein said PCM is integrated with said memory circuit, and wherein said diode thermally communicates with said first metallization layer.
6 more elements
A circuit comprising:
- a bulk silicon integrated circuit (IC);
- a first metallization layer that is arranged adjacent to said bulk silicon IC;
- and
- phase change memory (PCM) that is arranged adjacent to said first metallization layer and that comprises a plurality of PCM cells, each PCM cell including:
- a phase-change material,
- a heater that selectively heats said phase-change material, and
- a diode in series with said phase-change material,
- wherein said diode includes crystallized islands that are crystallized using a seeding metal layer and that are crystallized from an amorphous silicon layer that is deposited over said first metallization layer, and
- wherein N bits of user data are stored in each of said plurality of PCM cells, where N is an integer greater than one.
6 more elements
A circuit comprising:
- a bulk silicon integrated circuit (IC);
- a first metallization layer that is arranged adjacent to said bulk silicon IC;
- and
- phase change memory (PCM) that is arranged adjacent to said first metallization layer and that cormprises a plurality of PCM cells, each PCM cell including:
- a phase-change material,
- a heater that selectively heats said phase-change material, and
- a diode in series with said phase-change material, wherein said diode includes crystallized islands that are crystallized using a seeding metal layer and that are crystallized from an amorphous silicon layer that is deposited over said first metallization layer,
- wherein said heater includes a resistive material partially surrounding a dielectric material,
- wherein said resistive material and said dielectric material form a first planar surface, and
- wherein said phase-change material includes a second planar surface arranged adjacent to said first planar surface of said heater element.
7 more elements
Dependencies are inferred from the claim text.