Semiconductor processing system with ultra low-K dielectric
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsYasri Yudhistira, Johnny Widodo, Bei Chao Zhang, Liang-Choo Hsia
Life of this patent
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Abstract
A semiconductor processing system with ultra low-K dielectric is provided including providing a substrate having an electronic circuit, forming an ultra low-K dielectric layer, having porogens, over the substrate, blocking an incoming radiation from a first region of the ultra low-K dielectric layer, evaporating the porogens from a second region of the ultra low-K dielectric layer by projecting the incoming radiation on the second region, and removing the ultra low-K dielectric layer in the first region with a developer.
Claims10
A semiconductor processing system with ultra low-K dielectric comprising:
- providing a substrate having an electronic circuit;
- forming an ultra low-K dielectric layer, having porogens, over the substrate;
- applying a photoresist layer on the ultra low-K dielectric layer;
- blocking an incoming radiation from a first region of the ultra low-K dielectric layer;
- evaporating the porogens from a second region of the ultra low-K dielectric layer by projecting the incoming radiation on the second region;
- and
- removing the ultra low-K dielectric layer and the photoresist layer in the first region with a developer.
A semiconductor processing system with ultra low-K dielectric comprising:
- providing a substrate having an electronic circuit;
- forming an ultra low-K dielectric layer, having porogens, over the substrate including forming an insulator on a conductive material;
- applying a photoresist layer on the ultra low-k dielectric layer including patterning a first region;
- blocking an incoming radiation from a first region of the ultra low-K dielectric layer including blocking the incoming radiation using a photoresist mask or a reticle;
- evaporating the porogens from a second region of the ultra low-K dielectric layer by projecting the incoming radiation on the second region to form a nanopore;
- and
- removing the porogens from the ultra low-K dielectric layer includes selectively removing the first region from the ultra low-K dielectric layer and the photo resist with a developer.
Dependencies are inferred from the claim text.