Method of forming low-k dielectrics using a rapid curing process

A method of forming a low dielectric constant structure, comprising the steps of:

• providing on a substrate a non Si—H containing dielectric material having a first elastic modulus;
• and
• curing the dielectric material whereby the material is heated from a first temperature to a second temperature by increasing the temperature at an average rate of at least 1° C. per second or more, to produce a dielectric material having a second elastic modulus, which is greater than the first elastic modulus;
• wherein the dielectric material is formed from a precursor that is a silicon-containing chemical compound having the formula
• (R1—R2)n—Si—(X1)4−n,
• wherein
• X1 is halogen, acyloxy, alkoxy or OH group,
• R2 is an optional group and comprises an aromatic group having 6 carbon atoms and
• R1 is a substituent at position 4 of R2 selected from an alkyl, cyclo alkyl or polycyclo alkyl group having from 1 to 13 carbon atoms, an alkenyl group having from 2 to 5 carbon atoms, an alkynyl group having from 2 to 5 carbon atoms, Cl or F;
• and
• n is an integer 1-3;
• and
• is an organosiloxane polymeric material selected from the group consisting of methylsilsesquioxane, phenylsilsesquioxane, methylphenylsilsesquioxane, methylvinylsilsesquioxane, phenylvinylsilsesquioxane, vinylsilsesquioxane, methylphenylvinylsilsesquioxane;
• adamantyl or adamantyl derivative containing silsesquioxane;
• and perfluorinated or partially fluorinated aryl, alkyl or aryl-alkyl containing silsesquioxane.