InN/TiO2 photosensitized electrode

#The present invention relates to an photosensitized electrode; more particularly, relates to obtaining a photosensitized electrode having an indium nitride (InN) photosensitive layer to be applied in a solar cell device, an optoelectronic device and a hydrogen generator device.

#During recent years, a nano-crystal film technology is utilized in a Dye-Sensitized Solar Cell (DSSC) so that the efficiency of photoelectrical transformation has gained a great improvement along with a cheap cost. Hence, the cost for a solar cell may quite possibly drop for about 1/10 to ⅕. The former DSSC basically uses smooth electrode; and its dye molecule layer (such as a ruthenium ligand series, a cyanine, a chlorophyll or a dye derived) transforms electric charge effectively only at a monolayer close to the semiconductor. Because a smooth electrode has small area for absorption with little absorbing ability, its photoelectrical transformation ability is low (less than 1%). Recently, a porous nano-structured electrode is introduced for solving this problem. Because the surface area of the catalyst is thousands times of that of the smooth electrode, the photo electrical transformation ability is greatly improved. According to Michael Graetzel's research, the photoelectrical transformation efficiency of the DSSC is notably improved to 8%.

#The DSSC obviously relies its efficiency on its nanoelectrode structure of titanium oxide (TiO2). Therefore, on fabricating the TiO2, the shape, the arrangement and the interface characteristic of nano-crystal has to be well-controlled. The inner surface area of the TiO2 decides how much dye will be kept; the distribution of the holes affects the spreading of the redox pairs; the distribution of the granular size affects its optical characteristics; and the electron flow determines the connection between the particles. Nowadays, a TiO2 electrode has a electron transferring rate of 10−4 cm2/s; so the electrons are easy to be re-combined to the dye for an reaction.

#The present invention will be better understood from the following detailed description of the preferred embodiment according to the present invention, taken in conjunction with the accompanying drawings, in which

#FIG. 1 is a structural view showing a preferred embodiment according to the present invention;

#FIG. 2 is a flow view showing the fabricating of the photosensitized electrode;

#The following description of the preferred embodiment is provided to understand the features and the structures of the present invention.

#Please refer to FIG. 1, which is a structural view showing a preferred embodiment according to the present invention. As shown in the figure, the present invention is an InN(indium nitride)/TiO2 (titanium oxide) photosensitized electrode 1, comprising a substrate 11, a TiO2 film 12 and an InN photosensitive layer 13.

#The substrate 11 is an indium tin oxide (ITO) glass, an fluorine tin oxide (FTO) glass or other transparent conductive substrate.