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US 7,622,391 B2Granted
Method of forming an electrically conductive line in an integrated circuit
AssigneeAdvanced Micro Devices, Inc.
InventorsKai Frohberg, Thomas Werner, Ruo Qing Su
Life of this patent
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Abstract
A method of forming a semiconductor structure comprises providing a semiconductor structure comprising a layer of a dielectric material provided over an electrically conductive feature. An opening is formed in the layer of dielectric material. The opening is located over the electrically conductive feature and has a first lateral dimension. A cavity is formed in the electrically conductive feature. The cavity has a second lateral dimension being greater than the first lateral dimension. The cavity and the opening are filled with an electrically conductive material.
Claims16
A method of forming a semiconductor structure, comprising:
- providing a semiconductor substrate comprising a layer of a dielectric material provided over an electrically conductive feature, said layer of dielectric material comprising an opening being located over said electrically conductive feature;
- performing a first etching process to form a recess in said electrically conductive feature, said first etching process being adapted to remove a material of the electrically conductive feature;
- forming a protective layer over a first portion of said recess, a second portion of said recess not being covered by said protective layer;
- and
- performing a second etching process, said second etching process being adapted to remove the material of the electrically conductive feature at a greater etch rate than a material of the protective layer.
2 more elements
A method of forming a semiconductor structure, comprising:
- providing a semiconductor substrate comprising at least one layer of a dielectric material provided over an electrically conductive feature;
- forming an opening in said at least one layer of dielectric material, said opening having a first portion and a second portion, said second portion being located at a greater distance from said electrically conductive feature than said first portion, said first portion having a first dimension in a lateral direction, said lateral direction being substantially parallel to a surface of said layer of dielectric material, said second portion having a second dimension in said lateral direction, said first dimension being greater than said second dimension, wherein said formation of said opening comprises:
- performing a first etching process to form said second portion of said opening;
- forming a protective layer over a sidewall of said second portion of said opening, at least a portion of a bottom of the second portion of the opening not being covered by said protective layer;
- and
- performing a second etching process to form said first portion of said opening, said second etching process being adapted to remove a material of said at least one layer of dielectric material at a greater etch rate than a material of said protective layer;
- and
- filling said opening with an electrically conductive material.
5 more elements
A method of forming a semiconductor structure, comprising:
- providing a semiconductor substrate comprising at least one layer of a dielectric material provided over an electrically conductive feature;
- forming an opening in said at least one layer of dielectric material, said opening having a first portion and a second portion, said second portion being located at a greater distance from said electrically conductive feature than said first portion, said first portion having a first dimension in a lateral direction, said lateral direction being substantially parallel to a surface of said layer of dielectric material, said second portion having a second dimension in said lateral direction, said first dimension being greater than said second dimension, wherein said at least one layer of dielectric material comprises a first layer of dielectric material and a second layer of dielectric material, said first layer of dielectric material being formed over said electrically conductive feature, said second layer of dielectric material being formed over said first layer of dielectric material, and wherein said formation of said opening comprises:
- performing a first etching process to form said second portion of said opening in said second layer of dielectric material;
- and
- after said first etching process, performing a second etching process to form said first portion of said opening in said first layer of dielectric material, wherein said second etching process is adapted to remove a material of said first layer of dielectric material, leaving said second layer of dielectric material substantially intact;
- and
- filling said opening with an electrically conductive material.
4 more elements
Dependencies are inferred from the claim text.