Filling narrow and high aspect ratio openings with electroless deposition

Abstract

Methods of fabricating an interconnect utilizing an electroless deposition technique, which fundamentally comprises providing a dielectric material layer having an opening extending into the dielectric material from a first surface thereof, and electrolessly depositing a conductive material within the opening. A dual-function barrier layer is formed within the opening. The dual-function barrier layer is capable of acting as a diffusion barrier layer and a nucleation surface for a conductive material. An electrolessly deposited conductive material is formed immediately above the dual-function barrier layer. An ultra-thin seed layer may be formed immediately on top of the barrier layer prior to the electrolessly deposited conductive material being formed thereon.

Dependencies are inferred from the claim text.