Semiconductor structure and the forming method thereof
AssigneeNanya Technology Corporation
InventorsJar-Ming Ho, Shian-Jyh Lin, Ming-Yuan Huang
Life of this patent
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Abstract
The present invention provides a semiconductor structure and the forming method thereof. The structure includes a substrate having a plurality of stacks; a conformal layer on the substrate and a portion of sidewalls of the plurality of the stacks; and a plurality of plugs between the plurality of stacks. In addition, the present invention also provides a method of forming the semiconductor structure, comprising steps of providing a substrate; forming a plurality of stacks on the substrate; forming a conformal layer on the stacks and on the substrate; removing a portion of the conformal layer to expose a sidewall and a top surface of the plurality of stacks; and forming a plurality of plugs between the stacks.
Claims9
A method of forming a semiconductor structure, forming a plurality of plugs between the stacks comprising:
- providing a substrate;
- forming a plurality of stacks on the substrate;
- forming a conformal layer over the plurality of stacks and the substrate;
- forming a first polysilicon layer over the conformal layer;
- removing a portion of the first polysilicon layer and a portion of the conformal layer to expose a sidewall and a top surface of the plurality of stacks;
- forming a second polysilicon layer over the substrate;
- forming a barrier layer on the second polysilicon layer;
- and
- removing a portion of the barrier layer and the second polysilicon layer to form a plurality of plugs between the plurality of stacks.
Dependencies are inferred from the claim text.