Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor
AssigneeCanon Kabushiki Kaisha
InventorsTakao Yonehara, Yoshinobu Sekiguci
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Abstract
A semiconductor substrate including a gallium arsenide layer is obtained by executing a step of preparing a first substrate having a separating layer constituted of germanium and a gallium arsenide layer on the separating layer, a step of preparing a bonded substrate by bonding the first substrate and a second substrate, and a step of dividing the bonded substrate at a portion of the separating layer.
Claims25
A method for producing a semiconductor substrate including a gallium arsenide layer, comprising:
- a step of preparing a first substrate having a separating layer comprising a first porous germanium layer of a first porosity and a second porous germanium layer of a second porosity larger than the first porosity, and a gallium arsenide layer on said separating layer;
- a step of preparing a bonded substrate by bonding said first substrate and a second substrate;
- and
- a step of dividing said bonded substrate at a portion of said separating layer,
- wherein a germanium layer is provided on said separating layer, and said gallium arsenide layer is formed on said germanium layer provided on said separating layer.
A method for producing a light emitting diode, comprising:
- a step of preparing a porous germanium layer comprising a first porous germanium layer of a first porosity and a second porous germanium layer of a second porosity larger than the first porosity on a semiconductor substrate constituted of germanium;
- a step of forming plural semiconductor layers, including a gallium arsenide layer, on said porous germanium layer;
- a step of forming a light emitting diode area in said semiconductor layers;
- a step of forming a reflective layer on said light emitting diode area;
- and
- a step of separating said semiconductor substrate at said porous germanium layer,
- wherein a germanium layer is provided on said porous germanium layer, and said gallium arsenide layer is formed on said germanium layer provided on said porous germanium layer.
A method for producing a light emitting diode, comprising:
- a step of preparing a porous germanium layer comprising a first porous germanium layer of a first porosity and a second porous germanium layer of a second porosity larger than the first porosity on a semiconductor substrate constituted of germanium;
- a step of forming plural semiconductor layers, including a gallium arsenide layer, on said porous germanium layer;
- a step of forming a metal electrode layer in an uppermost layer of said plural semiconductor layers;
- a step of adhering a supporting substrate to a surface of said metal layer;
- a step of separating said semiconductor substrate at said porous germanium layer;
- and
- a step of forming a light emitting diode area in said semiconductor layers after the separation,
- wherein a germanium layer is provided on said porous germanium layer, and said gallium arsenide layer is formed on said germanium layer provided on said porous germanium layer.
Dependencies are inferred from the claim text.