Method for manufacturing semiconductor device
AssigneeNEC Electronics Corporation
InventorHiroaki Katou
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Abstract
According to the present invention, there is provided a method for manufacturing a semiconductor device that includes preparing a first semiconductor substrate and a second semiconductor substrate, forming a first insulating film on a surface of the first semiconductor substrate, forming circuit elements on a first surface of the second semiconductor substrate, grinding a second surface of the second semiconductor substrate, forming a second insulating film on the second surface of the second semiconductor substrate, and bonding the first insulating film and the second insulating film.
Claims3
A method for manufacturing a semiconductor device, comprising:
- preparing a first semiconductor substrate and a second semiconductor substrate;
- forming a first insulating film on a surface of the first semiconductor substrate;
- forming circuit elements on a first surface of the second semiconductor substrate;
- grinding a second surface of the second semiconductor substrate;
- forming a second insulating film on the second surface of the second semiconductor substrate;
- and
- bonding the first insulating film and the second insulating film.
Dependencies are inferred from the claim text.