US 7,622,361 B2 · Method for manufacturing semiconductor device

Abstract

It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.

Claims15

Dependent claims

A method for manufacturing a semiconductor device comprising:

forming a film over a first substrate;
forming an element over the film;
forming an insulating film over the element;
forming a terminal electrode over the insulating film;
forming a protective layer over the terminal electrode;
removing a part of the protective layer to expose a part of the terminal electrode;
peeling the film, the element, the insulating film, the terminal electrode and the protective layer from the first substrate;
pasting a second substrate to the film with an adhesive material;
and
pressure-bonding an FPC to the part of the terminal electrode so that the terminal electrode is electrically connected to the FPC.

7 more elements

Dependencies are inferred from the claim text.

Method for manufacturing semiconductor device

Life of this patent

Method for manufacturing semiconductor device

Life of this patent

Abstract

Claims15