Semiconductor device with semi-insulating substrate portions and method for forming the same

A method for forming a semi-insulating region in a semiconductor substrate comprising:

• providing an unpassivated semiconductor substructure including at least a semiconductor device formed at least one of in and directly on said semiconductor substrate;
• depositing and patterning a hardmask film on and directly contacting said semiconductor substructure thereby producing a patterned hardmask with openings therebetween;
• and
• implanting charged particles into portions of said semiconductor substrate beneath said openings using conditions sufficient to render said portions semi-insulating while a thickness of said patterned hardmask is sufficient to prevent said charged particles from passing through said hardmask film such that further portions of said semiconductor substrate under said patterned hardmask film are substantially free of said charged particles.

A method for forming a semi-insulating region in a semiconductor substrate comprising:

• providing an unpassivated semiconductor substructure including at least a semiconductor device formed at least one of in and on said semiconductor substrate;
• depositing a hardmask film to adhere to said semiconductor substrate, said hardmask film overlying and at least indirectly contacting said semiconductor substructure, then patterning said hardmask film thereby producing a patterned hardmask film with at least one opening;
• implanting charged particles into said semiconductor substrate beneath said opening to form at least one semi-insulating region in a first portion of said semiconductor substrate, wherein a second portion of said semiconductor substrate under said patterned hardmask film is substantially free of said charged particles;
• and,
• removing said patterned hardmask film after said implanting,
• wherein said charged particles comprise protons.