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US 7,622,354 B2Granted
Integrated circuit and method of manufacturing an integrated circuit
AssigneeQimonda AG
InventorsLars Dreeskornfeld, Jessica Hartwich, Tobias Mono, Arnd Scholz, Stefan Slesazeck
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Abstract
An integrated circuit including a memory device comprises an array portion comprising memory cells and conductive lines, an upper surface of the conductive lines being disposed beneath a surface of a semiconductor substrate, and a support portion comprising transistors of a first type, the transistors of the first type comprising a first gate electrode including vertical portions that are vertically adjacent to a channel of the transistor of the first type.
Claims10
A method of manufacturing an integrated circuit including a memory device, comprising
- defining an array portion comprising forming memory cells and forming conductive lines, and
- defining a support portion comprising forming transistors of a first type, wherein forming the conductive lines comprises defining grooves in a semiconductor substrate and filling the grooves with a conductive material, and wherein forming transistors of the first type comprises defining vertical portions that are vertically adjacent to a channel of the transistor of the first type.
Dependencies are inferred from the claim text.