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US 7,622,349 B2Granted
Floating gate non-volatile memory and method thereof
AssigneeFreescale Semiconductor, Inc.
InventorsMichael A. Sadd, Gowrishankar L. Chindalore, Cheong M. Hong
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Abstract
A method is provided which includes forming a first gate overlying a major surface of an electronic device substrate and forming a second gate overlying and spaced apart from the first gate. The method further includes forming a charge storage structure horizontally adjacent to, and continuous along, the first gate and the second gate, wherein a major surface of the charge storage structure is substantially vertical to the major surface of the substrate.
Claims19
A method comprising:
- forming a first control gate overlying a major surface of a substrate for an electronic device;
- forming a second control gate overlying the first control gate and spaced apart from the first control gate;
- and
- forming a charge storage structure adjacent to, and continuous along the first control gate, the second control gate, and a region between the first control gate and the second control gate, wherein a major surface of the charge storage structure is substantially perpendicular to the major surface of the substrate.
1 more element
Dependencies are inferred from the claim text.