Method for forming fully silicided gate electrodes and unsilicided poly resistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSteve Ming Ting, Chih-Hao Wang
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Abstract
A method is disclosed for forming silicided gate electrodes and unsilicided poly resistors. After patterning a semiconductor material for the gate electrode and resistor structures, a first dielectric layer is used to protect a poly resistor that is not to be silicided, then a first silicidation is performed for partially siliciding the gate electrode of the transistor. If the gate electrode is thick, a second dielectric layer is used to protect the resistor that is not to be silicided, then a second silicidation is performed for fully siliciding the gate electrode.
Claims20
A method for forming a transistor and unsilicided resistor on a semiconductor substrate, comprising:
- forming at least one gate electrode for the transistor and a resistor region using a semiconductor material;
- forming a first dielectric layer covering the resistor region;
- performing a first silicidation process for partially siliciding the gate electrode without siliciding the resistor region;
- forming a second dielectric layer covering the resistor region;
- and
- performing a second silicidation process for fully siliciding the gate electrode.
A method for forming a transistor and unsilicided resistor on a semiconductor substrate, comprising:
- forming at least one gate electrode for the transistor and a resistor region using a semiconductor material;
- forming a first dielectric layer covering the resistor region;
- performing a first silicidation process for partially siliciding the gate electrode without siliciding the resistor region;
- forming a second dielectric layer covering the resistor region;
- and
- performing a second silicidation process for siliciding the gate electrode after forming the second dielectric.
Dependencies are inferred from the claim text.