Manufacturing method of semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHideto Ohnuma
Life of this patent
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Abstract
To provide a manufacturing method of a semiconductor device with a reduced chip area by reducing the size of a pattern for forming an integrated circuit. For example, the size of an IC chip that is provided as an application of IC cards or IC tags can be reduced. The manufacturing method includes the steps of forming a gate electrode; forming an insulating layer over the gate electrode; and forming an opening in the insulating layer. One or both of the step of forming the gate electrode and the step of forming the opening in the insulating layer is/are conducted by a lithography process using a phase-shift mask or a hologram mask. Accordingly, micropatterns can be formed even over a substrate with low planarity such as a glass substrate.
Claims13
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a gate electrode;
- forming an insulating layer over the gate electrode;
- forming an opening in the insulating layer;
- forming a wiring layer over the insulating layer and in the opening,
- wherein the step of forming the opening in the insulating layer is conducted by a lithography process using a phase-shift mask comprising a light-shielding film having a first opening and a light-transmissive substrate with a phase shifter therebetween having a second opening, and
- wherein the first opening of the light-shielding film and the second opening of the phase shifter overlap each other, and the first opening is larger than the second opening.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a semiconductor layer over a substrate having an insulating surface;
- forming a gate electrode over a semiconductor layer with an insulating layer interposed therebetween;
- forming an interlayer insulating layer over the gate electrode;
- forming a contact hole in the interlayer insulating layer;
- and
- forming a wiring layer over the interlayer insulating layer and in the contact hole,
- wherein the step of forming the contact hole is conducted by a lithography process using a phase-shift mask comprising a light-shielding film having a first opening and a light-transmissive substrate with a phase shifter therebetween having a second opening, and
- wherein the first opening of the light-shielding film and the second opening of the phase shifter overlap each other, and the first opening is larger than the second opening.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a semiconductor layer over a substrate having an insulating surface;
- forming a gate electrode over a semiconductor layer with an insulating layer interposed therebetween;
- forming an interlayer insulating layer over the gate electrode;
- forming a contact hole in the interlayer insulating layer;
- and
- forming a wiring layer over the interlayer insulating layer and in contact with the semiconductor layer via the contact hole,
- wherein the step of forming the contact hole is conducted by a lithography process using a phase-shift mask comprising a light-shielding film having a first opening and a light-transmissive substrate with a phase shifter therebetween having a second opening, and
- wherein the first opening of the light-shielding film and the second opening of the phase shifter overlap each other, and the first opening is larger than the second opening.
Dependencies are inferred from the claim text.