Semiconductor substrates having useful and transfer layers
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsBruno Ghyselen, Fabrice Letertre
Life of this patent
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Abstract
A method of fabricating composite substrates by associating a plurality of transfer layers in spaced relation upon a single intermediate support; providing a support layer on each transfer layer to form a composite substrate; and detaching the composite substrates from the intermediate support. The support layer is made of a deposited material that has a lower quality than that of the intermediate support. A bonding layer may be included on one of the intermediate support or the useful layer, or both, to facilitate bonding of the layers. The final substrates are useful in optic, electronic, or optoelectronic applications.
Claims14
A method of fabricating composite substrates of semiconductor materials for use in optics, electronics, or optoelectronics which comprises:
- associating a plurality of transfer layers in spaced relation upon an intermediate support;
- providing a support layer on each transfer layer to form a composite substrate;
- providing each transfer layer, the intermediate support, or both with a bonding layer prior to associating the transfer layers with the intermediate support;
- detaching the composite substrates from the intermediate support;
- and
- removing the bonding layer(s) from the composite substrates after they are detached from the intermediate support,
- wherein in each composite substrate the transfer layer is made of at least one of silicon (1,1,1,), silicon carbide, a monocrystalline material, sapphire, diamond, gallium nitride, aluminum nitride, or a combination of at least two of these materials, the support layer is made of at least one of silicon, silicon carbide, sapphire, diamond, graphite, gallium nitride, aluminum nitride, or a combination of at least two of these materials, and the transfer layer is a relatively thin layer compared to the support layer which is a relatively thick layer.
A method of fabricating composite substrates of semiconductor materials for use in optics, electronics, or optoelectronics which comprises:
- associating a plurality of transfer layers in spaced relation upon an intermediate support;
- providing the intermediate support with a bonding layer prior to associating the transfer layers with the intermediate support;
- providing a support layer on each transfer layer to form a composite substrate;
- and
- detaching the composite substrates from the intermediate support,
- wherein the bonding layer of the intermediate support is planarized or removed prior to providing the transfer layers thereon.
A method of fabricating composite substrates of semiconductor materials for use in optics, electronics, or optoelectronics, which comprises:
- associating a plurality of transfer layers in spaced relation upon an intermediate support;
- providing the intermediate support with a bonding layer prior to associating the transfer layers with the intermediate support;
- providing a support layer on each transfer layer to form a composite substrate;
- detaching the composite substrates from the intermediate support;
- and
- removing the bonding layer from the intermediate support after the composite substrates are detached therefrom so that the intermediate support can be recycled for fabricating additional composite substrates.
Dependencies are inferred from the claim text.