CMOS image sensor and fabricating method thereof
AssigneeDongbu HiTek Co., Ltd.
InventorJun Woo Song
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Abstract
A CMOS image sensor and method of fabricating the same are disclosed. The method comprises forming a plurality of polysilicon patterns on a silicon epitaxial layer which correspond to a plurality of photodiodes in a dummy pixel area, depositing a metal with a high melting point metal on the plurality of polysilicon patterns using a photoresist in an etching process, forming a silicide layer of the high melting point metal by removing the photoresist and then performing an ashing and rapid annealing process, sequentially forming a device protecting layer and a planarization layer on the silicon epitaxial layer and silicide layer, and forming a microlens on the planarization layer which corresponds to the silicide layer.
Claims5
A method of fabricating a CMOS image sensor, the method comprising:
- forming a plurality of polysilicon patterns on a silicon epitaxial layer which correspond to the location of a plurality of photodiodes formed in a dummy pixel area;
- depositing a metal with a high melting point on the a plurality of the polysilicon patterns silicon on the epitaxial layer using a photoresist in an etching process;
- forming a silicide layer of the high melting point metal by removing the photoresist and performing an ashing and rapid annealing process;
- sequentially forming a device protecting layer and a planarization layer on the silicon epitaxial layer and silicide layer;
- and
- forming a microlens on the planarization layer which corresponds to the location of the silicide layer.
Dependencies are inferred from the claim text.