Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device

A method for producing a semiconductor light emitting device, comprising the step of:

• using a nitride type III-V group compound semiconductor substrate in which a plurality of stripe-shaped second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce the semiconductor light emitting device, the second average dislocation density being greater than the first average dislocation density, at least one of the second regions having a c-axis that is inverted relative to the first region,
• wherein the semiconductor light emitting device has a light emitting region that does not pass through any one of the second regions.

A method for producing a semiconductor device, comprising the step of:

• using a nitride type III-V group compound semiconductor substrate in which a plurality of stripe-shaped second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce the semiconductor device, the second average dislocation density being greater than the first average dislocation density, at least one of the second regions having a c-axis that is inverted relative to the first region,
• wherein the semiconductor device has an active region that does not pass through any one of the second regions.

A method for producing a structured substrate, comprising the step of:

• using a nitride type III-V group compound semiconductor substrate in which a plurality of stripe-shaped second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce a structured substrate, the second average dislocation density being greater than the first average dislocation density, the second regions being arranged at a first interval in a first direction and at a second interval in a second direction perpendicular to the first direction, the second interval being smaller than the first interval, at least one of the second regions having a c-axis that is inverted relative to the first region,
• wherein the structured substrate has a structure that does not pass through any one of the second regions.

A method for producing a structured substrate, comprising the step of:

• using a nitride type III-V group compound semiconductor substrate in which a plurality of stripe-shaped second regions that linearly extend and that are made of a crystal having a second average dislocation density are regularly arranged in parallel in a first region made of a crystal having a first average dislocation density so as to produce a structured substrate, the second average dislocation density being greater than the first average dislocation density, at least one of the second regions having a c-axis that is inverted relative to the first region,
• wherein the structured substrate has a structure that does not pass through any one of the second regions.

A method for producing a semiconductor light emitting device, comprising the step of:

• using a nitride type III-V group compound semiconductor substrate in which a plurality of stripe-shaped second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce a semiconductor light emitting device, the second average dislocation density being greater than the first average dislocation density, the second regions being arranged at a first interval in a first direction and at a second interval in a second direction perpendicular to the first direction, the second interval being smaller than the first interval, at least one of the second regions having a c-axis that is inverted relative to the first region,
• wherein the semiconductor light emitting device has a light emitting region that does not pass through any one of the second regions.

A method for producing a semiconductor light emitting device, comprising the step of:

• using a nitride type III-V group compound semiconductor substrate in which a plurality of stripe-shaped second regions that linearly extend and that are made of a crystal having a second average dislocation density are regularly arranged in parallel in a first region made of a crystal having a first average dislocation density so as to produce a semiconductor light emitting device, the second average dislocation density being greater than the first average dislocation density, at least one of the second regions having a c-axis that is inverted relative to the first region,
• wherein the semiconductor light emitting device has a light emitting region that does not pass through any one of the second regions.

A method for producing a semiconductor device, comprising the step of:

• using a nitride type III-V group compound semiconductor substrate in which a plurality of stripe-shaped second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce a semiconductor device, the second average dislocation density being greater than the first average dislocation density, the second regions being arranged at a first interval in a first direction and at a second interval in a second direction perpendicular to the first direction, the second interval being smaller than the first interval, at least one of the second regions having a c-axis that is inverted relative to the first region,
• wherein the semiconductor device has an active region that does not pass through any one of the second regions.

A method for producing a semiconductor device, comprising the step of:

• using a nitride type III-V group compound semiconductor substrate in which a plurality of stripe-shaped second regions that linearly extend and that are made of a crystal having a second average dislocation density are regularly arranged in parallel in a first region made of a crystal having a first average dislocation density so as to produce a semiconductor device, the second average dislocation density being greater than the first average dislocation density, at least one of the second regions having a c-axis that is inverted relative to the first region,
• wherein the semiconductor device has an active region that does not pass through any one of the second regions.