Tunable laser source with integrated optical modulator
AssigneeThe Regents of the University of California
InventorsThomas G. B. Mason, Larry A. Coldren, Gregory Fish
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Abstract
A tunable laser source with integrated optical modulator. The tunable laser source is a widely tunable semiconductor laser that is comprised of an active region on top of a thick, low bandgap, waveguide layer, wherein both the waveguide layer and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator is integrated into the semiconductor laser, wherein the electro-absorption modulator shares the waveguide layer with the semiconductor laser.
Claims17
A method for fabricating a tunable laser with an integrated modulator, comprising:
- (a) performing a first growth step, wherein a buffer layer, a waveguide layer, a stop etch layer, an active region, and a terminating layer are grown on a semiconductor wafer;
- (b) patterning and etching the terminating layer and active region down to the stop-etch layer, everywhere except in a gain section of the laser;
- (c) patterning and etching of one or more sets of periodically sampled gratings in one or more mirror sections of the laser;
- (d) performing a second growth step that completes a vertical structure growth of the terminating layer and a contact layer beneath one or more contacts of the laser;
- (e) isolating sections of the laser from one another, and between the modulator and the laser;
- (f) patterning the contacts of the laser, removing the contact layer therebetween by etching, and metalizing the contacts;
- (g) patterning and etching a ridge waveguide stripe down to either the active region or the waveguide layer and;
- (h) cleaving the device out of the wafer, and then applying an antireflective coating on at least one end of the device.
A method for fabricating a tunable laser with an integrated modulator, comprising:
- (a) performing a first growth step, wherein a buffer layer, a waveguide layer, a stop etch layer, an active region, and a cladding layer are grown on a semiconductor wafer;
- (b) patterning and selectively etching off of the cladding layer and active region down to the stop-etch layer, everywhere except in a gain section;
- (c) patterning and etching of one or more sets of periodically sampled gratings in one or more mirror sections of the laser;
- (d) performing a second growth step, wherein an additional growth of the cladding layer is grown to cover one or more periodically sampled gratings in the mirror sections;
- (e) patterning and etching a buried ridge waveguide stripe, wherein the waveguide strip is etched laterally to beneath the waveguide layer;
- (f) performing a third growth step that completes a vertical structure growth of the terminating layer and a contact layer beneath one or more contacts of the laser;
- (g) isolating sections of the laser from one another, and between the modulator and the laser;
- (h) patterning the contacts of the laser, removing the contact layer therebetween by etching, and metalizing the contacts;
- (i) cleaving the device out of the wafer, and then applying antireflective coatings on at least one end of the device.
Dependencies are inferred from the claim text.