Semiconductor devices having a planarized insulating layer and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-Hyun Park, Jae-Hee Oh, Won-Cheol Jeong
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Abstract
A semiconductor device includes at least one phase-change pattern disposed on a semiconductor substrate. A planarized capping layer, a planarized protecting layer, and a planarized insulating layer are sequentially stacked to surround sidewalls of the at least one phase-change pattern. An interconnection layer pattern is disposed on the planarized capping layer, the planarized protecting layer, and the planarized insulating layer. The interconnection layer pattern is in contact with the phase-change pattern.
Claims23
A method of fabricating a semiconductor device, comprising:
- forming at least one phase-change pattern on a semiconductor substrate;
- sequentially forming a planarized capping layer, a planarized protecting layer, and a planarized insulating layer to cover the at least one phase-change pattern;
- removing the planarized insulating layer, the planarized protecting layer, and the planarized capping layer to expose an entire top surface of the at least one phase-change pattern and surround sidewalls of the at least one phase-change pattern;
- and
- forming an interconnection layer pattern traversing removed surfaces of the planarized insulating layer, the planarized protecting layer, and the planarized capping layer so as to be in direct contact with the at least one phase-change pattern;
- wherein the removed surfaces are the same level as the entire top surface.
A method of fabricating a semiconductor device comprising:
- forming at least one phase-change pattern on a semiconductor substrate;
- sequentially forming a planarized capping layer and a planarized protecting layer on a top surface of the at least one phase-change pattern;
- forming a planarized insulating layer to cover the planarized protecting layer, the planarized capping layer, and the at least one phase-change pattern;
- removing the planarized insulating layer, the planarized protecting layer, and the planarized capping layer to expose an entire top surface of the at least one phase-change pattern, the planarized insulating layer surrounding sidewalls of the at least one phase-change pattern;
- and
- forming an interconnection layer pattern traversing a removed surface of the planarized insulating layer so as to be in direct contact with the entire top surface of the at least one phase-change pattern;
- wherein the removed surface is the same level as the entire top surface.
Dependencies are inferred from the claim text.