Contrast enhancing layers
AssigneeMassachusetts Institute of Technology
InventorTheodore H. Fedynyshyn
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Abstract
Contrast enhancing layers and other materials that can be used as a conformal mask over a photoresist are discussed. In particular, methods and compositions are discussed that can be advantageous when performing lithography using short wavelength actinic radiation (e.g., wavelengths below 200 nm, such as 193 nm or 157 nm). For example, contrast enhancing layers that include an organosilicon containing material can be used to enhance the contrast of a pattern formed on an underlying photoresist layer. Silicon containing polymers, oligomers, and other non-polymeric materials can be used as effective CEL materials.
Claims53
A method of enhancing the image contrast of a pattern formed on a photoresist, comprising:
- forming a photoresist layer on a substrate, the photoresist layer capable of being patterned by radiation having a wavelength below about 200 nm;
- forming a contrast enhancing layer (CEL) coupled to the photoresist layer, the CEL comprising an organosilicon containing material that is photobleachable by exposure to the radiation;
- and
- exposing an image pattern on a surface of the CEL with actinic radiation having a wavelength below about 200 nm to thereby bleach the CEL, and form a corresponding pattern on the photoresist layer with enhanced image contrast relative to directly exposing the actinic radiation image pattern on the photoresist layer.
Dependencies are inferred from the claim text.