Resist composition and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Koji Hasegawa, Takeru Watanabe, Yuji Harada
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Abstract
A resist composition comprises a base polymer which changes its alkali solubility under the action of an acid, and an additive copolymer comprising recurring units (a) and (b). R1 is F or CF3, R2 and R3 are H or alkyl or form a ring, R4 is H or an acid labile group, R5 to R6 are H, F, or alkyl, or two of R5 to R8 may together form a ring, m=0 or 1, 0.2≦a≦0.8, and 0.1≦b≦0.6. A resist film of the composition has good barrier property against water so that leaching of the resist film with water is controlled, minimizing a change of pattern profile due to leach-out.
Claims12
A resist composition comprising
- a polymer which changes its alkali solubility under the action of an acid as a base resin, and
- a copolymer comprising recurring units (a) and (b) of the general formula (1) as an additive,
- wherein R1 is fluorine or trifluoromethyl, R2 and R3 are hydrogen or a straight, branched or cyclic C1-C20 alkyl group, or R2 and R3 may bond together to form a ring with the carbon atom to which they are attached, and in this case, R2 and R3 together represent a straight, branched or cyclic C2-C20 alkylene group, R4 is hydrogen or an acid labile group,
- R5 to R8 are independently selected from the group consisting of hydrogen, fluorine, and a straight, branched or cyclic C1-C20 alkyl group, which may contain at least one ether or ester group, may be substituted with fluorine, and may contain a hydroxy group, or any two of R5 to R8 may bond together to form a ring with the carbon atom(s) to which they are attached, m is 0 or 1, a and b are numbers in the range:
- 0.2≦a≦0.8, and 0.1≦b≦0.6.
Dependencies are inferred from the claim text.