Hydrogen gas sensitive semiconductor sensor
AssigneeAdixen Sensistor AB
InventorFredrik Enquist
Life of this patent
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Abstract
A hydrogen gas sensitive semiconductor sensor including a catalytic metal layer, a semiconductor layer and an insulator layer arranged between the catalytic metal layer and the semiconductor layer. The catalytic metal layer includes an outer surface and an inner surface including at least one hydrogen atom adsorption surface portion. Each hydrogen atom adsorption surface portion is arranged adjacent to the insulator layer. The surface area of the outer surface is at least 100% larger than the total surface area of all of the at least one hydrogen atom adsorption surface portion. A probe includes the sensor, A hydrogen gas detection system includes the sensor. Use of the sensor for detection of presence of and/or measurement of concentration of hydrogen gas in a gas sample.
Claims20
A hydrogen gas sensitive semiconductor sensor, comprising:
- a catalytic metal layer comprising an outer surface and an inner surface, the outer surface being arranged to freely communicate with the ambient atmosphere, the inner surface comprising at least one hydrogen atom adsorption surface portion, a surface area of the outer surface being at least 100% larger than a total surface area of the at least one hydrogen atom adsorption surface portion of said inner surface, the inner surface further comprising at least one hydrogen atom adsorption inhibited surface portion;
- a semiconductor layer;
- an insulator layer arranged between the catalytic metal layer and the semiconductor layer, such that the at least one hydrogen atom adsorption surface portion of the catalytic metal layer is arranged adjacent to said insulator layer;
- and
- a hydrogen atom adsorption inhibiting material layer sandwiched between each hydrogen atom adsorption inhibited surface portion and the insulator layer, whereby each hydrogen atom adsorption inhibited surface portion is arranged adjacent to a hydrogen atom adsorption inhibiting material layer and whereby a thickness of the hydrogen atom adsorption inhibiting material layer is 0.001-0.3 μm.
A probe for detection of hydrogen gas, comprising:
- a hydrogen gas sensitive semiconductor sensor comprising:
- a catalytic metal layer comprising an outer surface and an inner surface, the outer surface being arranged to freely communicate with the ambient atmosphere, the inner surface comprising at least one hydrogen atom adsorption surface portion, a surface area of the outer surface being at least 100% larger than a total surface area of the at least one hydrogen atom adsorption surface portion of said inner surface, the inner surface further comprising at least one hydrogen atom adsorption inhibited surface portion;
- a semiconductor layer;
- an insulator layer arranged between the catalytic metal layer and the semiconductor layer, such that the at least one hydrogen atom adsorption surface portion of the catalytic metal layer is arranged adjacent to said insulator layer;
- and
- a hydrogen atom adsorption inhibiting material layer sandwiched between each hydrogen atom adsorption inhibited surface portion and the insulator layer, whereby each hydrogen atom adsorption inhibited surface portion is arranged adjacent to a hydrogen atom adsorption inhibiting material layer and whereby a thickness of the hydrogen atom adsorption inhibiting material layer is 0.001-0.3 μm.
A hydrogen gas detection system, comprising:
- a probe comprising a hydrogen gas sensitive semiconductor sensor comprising
- a catalytic metal layer comprising an outer surface and an inner surface, the outer surface being arranged to freely communicate with the ambient atmosphere, the inner surface comprising at least one hydrogen atom adsorption surface portion, a surface area of the outer surface being at least 100% larger than a total surface area of the at least one hydrogen atom adsorption surface portion of said inner surface, the inner surface further comprising at least one hydrogen atom adsorption inhibited surface portion;
- a semiconductor layer;
- an insulator layer arranged between the catalytic metal layer and the semiconductor layer, such that the at least one hydrogen atom adsorption surface portion of the catalytic metal layer is arranged adjacent to said insulator layer;
- and
- a hydrogen atom adsorption inhibiting material layer sandwiched between each hydrogen atom adsorption inhibited surface portion and the insulator layer, whereby each hydrogen atom adsorption inhibited surface portion is arranged adjacent to a hydrogen atom adsorption inhibiting material layer and whereby a thickness of the hydrogen atom adsorption inhibiting material layer is 0.001-0.3 μm;
- and
- a measuring unit.
Dependencies are inferred from the claim text.