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US 7,622,048 B2Granted
Sacrificial substrate for etching
AssigneeFUJIFILM Dimatix, Inc.
InventorsJeffrey Birkmeyer, Stephen R. Deming, Zhenfang Chen
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Abstract
A method of etching a silicon substrate is described. The method includes bonding a first silicon substrate to a sacrificial silicon substrate. The first silicon substrate is etched. A pressure is applied at an interface of the first silicon substrate and the sacrificial silicon substrate to cause the first silicon substrate to separate from the sacrificial silicon substrate. An apparatus having metal blades can be used to separate the substrates.
Claims19
A method of etching a silicon substrate, comprising:
- bonding a first silicon substrate to a sacrificial silicon substrate;
- after bonding, etching the first silicon substrate from an exposed surface of the first silicon substrate through the first silicon substrate and into a flat surface of the sacrificial silicon substrate that is adjacent to the first silicon substrate;
- and
- applying a pressure at an interface of the first silicon substrate and the sacrificial silicon substrate to cause the first silicon substrate to separate from the sacrificial silicon substrate, wherein applying the pressure at the interface continues until the first silicon substrate is completely separated from the sacrificial substrate.
1 more element
Dependencies are inferred from the claim text.