Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same

A method for cleaning a substrate for semiconductor devices comprising:

• chemical mechanical polishing a substrate for semiconductor devices which is provided on a partial or whole surface thereof with silicon, transition metals or transition metal compounds, and
• cleaning the substrate using a cleaning solution,
• said cleaning solution comprising at least the following components (A), (B) and (C):
• (A) a polyoxyethylene alkyl ether surfactant containing a hydrocarbon group which may have a substituent group except for phenyl, and a polyoxyethylene group in which a ratio (m/n) of a number (m) of carbon atoms contained in the hydrocarbon group to a repeating number (n) of oxyethylene groups contained in the polyoxyethylene group is in the range of 1 to 1.2, the number (m) of carbon atoms is not less than 9, and in which the number of oxyethylene groups is 7 to 18;
• (B) water;
• and
• (C) an alkali.