Method for detecting and compensating for temperature effects
AssigneeXilinx, Inc.
InventorAustin H. Lesea
Life of this patent
Estimating the term…
Abstract
An integrated circuit fabricated in a multiple oxide process can be used to provide a temperature-insensitive circuit. The temperature-insensitive circuit can be a ring oscillator; this ring oscillator can be used as a low-cost integrated reference frequency to monitor and to modify the behavior of the integrated to produce the desired results. In some embodiments, the reference oscillator output can be compared to second oscillator output where the second oscillator performance is temperature-sensitive. The comparison result can be monitored and processed to power down the integrated circuit.
Claims16
A method for detecting temperature in an integrated circuit (IC), comprising:
- providing a temperature-insensitive oscillator having at least one temperature-insensitive transistor and a first oscillating output, wherein performance of the temperature-insensitive oscillator is insensitive to temperature;
- providing a temperature-sensitive oscillator having a second oscillating output, wherein performance of the temperature-sensitive oscillator varies with temperature;
- comparing the first oscillating output and the second oscillating output;
- providing a compare output in response to the comparing;
- and
- selectively powering-down at least a portion of the IC in response to the compare output indicating a change in temperature.
An integrated circuit fabricated in a process having at least a first oxide thickness and a second oxide thickness, comprising:
- a temperature-insensitive circuit having at least one temperature-insensitive transistor, wherein delay of the temperature-insensitive circuit is insensitive to temperature variations, the temperature-insensitive circuit comprising:
- a first NMOS transistor, having the first oxide thickness;
- a first inverter, having a first input coupled to a source of the first NMOS transistor, and having, a first PMOS transistor including the second oxide thickness, and a second NMOS transistor including a low Vt (Threshold voltage) and the second oxide thickness;
- a second PMOS transistor having, the second oxide thickness, a gate coupled to a first output of the first inverter, and a drain coupled to the first input of the first inverter;
- a second inverter having a second input coupled to the first output of the first inverter and having the second oxide thickness and a second output;
- a temperature-sensitive circuit, having a third output and at least one temperature-sensitive transistor, wherein the at least one temperature-sensitive transistor has the second oxide thickness;
- a comparison circuit having a comparison output, a third input coupled to the second output of the second inverter of the temperature-insensitive circuit, and a fourth input coupled to the third output of the temperature-sensitive circuit, wherein the comparison output of the comparison circuit indicates a difference between the third and fourth inputs of the comparison circuit, and wherein the first oxide thickness is a mid oxide thickness, and the second oxide thickness is a thin oxide thickness,
- wherein the temperature-sensitive circuit comprises a plurality of temperature-sensitive circuits having a respective plurality of outputs, the integrated circuit further comprising:
- a select circuit, comprising:
- a plurality of select inputs coupled to the respective plurality of outputs of the plurality of temperature-sensitive circuits;
- a select output, coupled to the second input of the comparison circuit;
- and
- a control input, wherein the control input selectively couples one of the plurality of select inputs as the select output.
Dependencies are inferred from the claim text.