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US 7,616,904 B1Granted
Waveguide photodetector with integrated electronics
AssigneeLuxtera, Inc.
InventorsLawrence C. Gunn, III, Thierry J. Pinguet, Maxime Jean Rattier, Giovanni Capellini
Life of this patent
Estimating the term…
Abstract
A germanium on silicon waveguide photodetector disposed on a silicon on insulator (SOI) substrate. The photodetector is incorporated into a section of a planar silicon waveguide on the substrate. The photodetector generates an electric current as an infrared optical signal travels through the photodetector.
Claims6
A method for communicating signals to a semiconductor device using optical signals comprising:
- sending an optical signal to an input of a germanium on silicon waveguide photodetector located on a semiconductor chip, said germanium on silicon waveguide photodetector comprising:
- a waveguide comprising:
- a core comprised of a germanium on silicon heterojunction stack comprising:
- a silicon layer comprising substantially silicon for conducting light, and
- a germanium layer comprising substantially germanium for conducting light;
- and
- a cladding comprised of a plurality of dielectric materials;
- an optical input;
- a first plurality of conductive contacts coupled to said germanium layer;
- and
- a second plurality of conductive contacts coupled to said silicon layer;
- and,
- outputting an electrical signal through at least one of the second plurality of conductive contacts of the germanium on silicon waveguide photodetector to an input of a semiconductor device located on the semiconductor chip.
10 more elements
A method for communicating signals to a semiconductor device using optical signals comprising:
- receiving an optical signal at an input of a germanium on silicon waveguide photodetector located on a semiconductor chip, said germanium on silicon waveguide photodetector comprising:
- a waveguide comprising:
- a core comprised of a germanium on silicon heterojunction stack comprising:
- a silicon layer comprising substantially silicon for conducting light, and
- a germanium layer comprising substantially germanium for conducting light;
- and
- a cladding comprised of a plurality of dielectric materials;
- an optical input;
- a first plurality of conductive contacts coupled to said germanium layer;
- and
- a second plurality of conductive contacts coupled to said silicon layer;
- and,
- outputting an electrical signal through at least one of the second plurality of conductive contacts of the germanium on silicon waveguide photodetector to an input of a semiconductor device located on the semiconductor chip.
10 more elements
A method for communicating signals to a semiconductor device using optical signals comprising:
- sending an optical signal to an input of a germanium on silicon waveguide photodetector located on a semiconductor chip, said germanium on silicon waveguide photodetector comprising:
- a waveguide comprising:
- a core comprised of a germanium on silicon heterojunction stack comprising:
- a silicon layer comprising substantially silicon for conducting light, and
- a germanium layer comprising substantially germanium for conducting light;
- and
- a cladding comprised of a plurality of dielectric materials;
- an optical input;
- a first plurality of conductive contacts coupled to said germanium layer;
- and
- a second plurality of conductive contacts coupled to said silicon layer;
- and,
- outputting an electrical signal through at least one of the first plurality of conductive contacts of the germanium on silicon waveguide photodetector to an input of a semiconductor device located on the semiconductor chip.
10 more elements
A method for communicating signals to a semiconductor device using optical signals comprising:
- receiving an optical signal at an input of a germanium on silicon waveguide photodetector located on a semiconductor chip, said germanium on silicon waveguide photodetector comprising:
- a waveguide comprising:
- a core comprised of a germanium on silicon heterojunction stack comprising:
- a silicon layer comprising substantially silicon for conducting light, and
- a germanium layer comprising substantially germanium for conducting light;
- and
- a cladding comprised of a plurality of dielectric materials;
- an optical input;
- a first plurality of conductive contacts coupled to said germanium layer;
- and
- a second plurality of conductive contacts coupled to said silicon layer;
- and,
- outputting an electrical signal through at least one of the first plurality of conductive contacts of the germanium on silicon waveguide photodetector to an input of a semiconductor device located on the semiconductor chip.
10 more elements
A method for communicating signals to a semiconductor device using optical signals comprising:
- sending an optical signal to an input of a germanium on silicon waveguide photodetector located on a semiconductor chip, said germanium on silicon waveguide photodetector comprising:
- a waveguide comprising:
- a core comprised of a germanium on silicon heterojunction stack comprising:
- a silicon layer comprising substantially silicon for conducting light, and
- a germanium layer comprising substantially germanium for absorbing light;
- and
- a cladding comprised of a plurality of dielectric materials;
- an optical input;
- a first plurality of conductive contacts coupled to said germanium layer;
- and
- a second plurality of conductive contacts coupled to said silicon layer;
- and,
- outputting an electrical signal through at least one of the second plurality of conductive contacts of the germanium on silicon waveguide photodetector to an input of a semiconductor device located on the semiconductor chip.
10 more elements
A method for communicating signals to a semiconductor device using optical signals comprising:
- receiving an optical signal at an input of a germanium on silicon waveguide photodetector located on a semiconductor chip, said germanium on silicon waveguide photodetector comprising:
- a waveguide comprising:
- a core comprised of a germanium on silicon heterojunction stack comprising:
- a silicon layer comprising substantially silicon for conducting light, and
- a germanium layer comprising substantially germanium for absorbing light;
- and
- a cladding comprised of a plurality of dielectric materials;
- an optical input;
- a first plurality of conductive contacts coupled to said germanium layer;
- and
- a second plurality of conductive contacts coupled to said silicon layer;
- and,
- outputting an electrical signal through at least one of the second plurality of conductive contacts of the germanium on silicon waveguide photodetector to an input of a semiconductor device located on the semiconductor chip.
10 more elements
Dependencies are inferred from the claim text.